Center for Oxide Semiconductor Devices

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Center Overview

Center Objectives

This center was established to promote research on "oxide semiconductors" and "oxide electronics," which are expected to: be key devices for the support of the next-generation advanced information society; facilitate the development of new academic fields and technologies; and have considerable social implementation. In recent years, against the backdrop of increasing demand for energy conservation and flexible devices, there has been a strong need to create new materials and technologies that complement or surpass conventional silicon technology. This center will bring together knowledge accumulated to date regarding thin-film formation technology, device fabrication technology, and material design; and will apply that knowledge in an integrated manner in work towards results ranging from elucidation of fundamental physical properties to the development of innovative devices. Through this research, we aim to achieve knowledge breakthroughs and contribute to the realization of a sustainable society and the development of regional and international industries.

Research Direction and Future Prospects

1. Development of New Materials and Processes

We aim to create high-quality oxide semiconductor thin films through (a) atomic-level interface control and (b) the development of low-temperature film deposition processes with low environmental impact.

2. Creation of Multifunctional Devices

We aim to realize new electronic devices that utilize the characteristics of oxide semiconductors, such as ultra-low power transistors, transparent electronic circuits, flexible devices, and next-generation memory.

3. Strengthening Implementation through Industry-Government-Academia Collaboration

In addition to foundation research, we will develop our research results into practical technologies and achieve social implementation of those technologies through joint research with companies and research institutions.

4. Short- to Long-Term Aims

In the short term, we aim to develop new materials and establish high-quality thin-film synthesis technologies. In the medium to long term, we aim to lead the development of ultra-low-power, multifunctional electronic devices for "IoT society in which everything is intelligently connected." We will pursue research on the cutting edge of oxide electronics and disseminate the resulting innovative technologies to the world, contributing to the realization of a sustainable society.