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Areas of specialization | |
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Laboratory/research office |
Advanced Materials and Device Science Laboratory
Our aim is to contribute to the improvement of quality of life through the development of advanced functional devices for information technology. Advanced devices and materials enable that development, as well as the moderation of environmental loading. In addition, device science is an essential tool for the enhancement of material functionality. In this laboratory, we conduct a wide variety of research, ranging from materials development to device science research, on the use of semiconductors as core materials. |
Current reseach topics | |
Educational background |
2003: Doctor
1988: Master |
Professional background |
2012-:
2011-: 2005-2010: 2003-2005: 1996-2003: 1988-1996: |
Licenses | Academic societies |
Courses * Courses provided in English are shown with (E) mark
Undergraduate school ▼
Seminar 2
Seminar 3
Graduation Thesis
Functional Electric Devices Engineering
Physics and Material Experiment
Seminar 3
Graduation Thesis
Functional Electric Devices Engineering
Physics and Material Experiment
Graduate school ▼
Individual Work for Graduate
Seminar 1
Seminar 2
Seminar 3
Seminar 4
Advanced Seminar 1
Advanced Seminar 2
Seminar 1
Seminar 2
Seminar 3
Seminar 4
Advanced Seminar 1
Advanced Seminar 2
Research activities
Research papers ▼
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Authors: WANG Dapeng, JIANG Jingxin, FURUTA Mamoru
Title: Investigation of Carrier Generation Mechanism in Fluorine-Doped n+-In–Ga–Zn-O for Self-Aligned Thin-Film Transistors
Journal: IEEE Journal of Display Technology, Vol. 12, No. 3, pp. 258-262, IEEE
Year: 2016/03/01 -
Authors: Kahori Kise, Mami Fujii, Satoshi Urakaswa, Haruka Yamazaki, Emi Kawashima, Shigekazu Tomai, Koki Yano, WANG Dapeng, FURUTA Mamoru, Yasuaki Ishikawa, Yukiharu Uraoka
Title: Self-heating induced instability of oxide thin film transistors under dynamic stress
Journal: Applied Physics Letters, Vol. 108, p. 023501
Year: 2016/01 -
Authors: FURUTA Mamoru, JIANG Jingxin, MAI Phi Hung, Tatsuya Toda, WANG Dapeng, Gengo Tatsuoka
Title: Suppression of Negative Gate Bias and Illumination Stress Degradation by Fluorine-Passivated In-Ga-Zn-O Thin-Film Transistors
Journal: ECS Journal of Solid State Science and Technology, Vol. 5, No. 3, pp. Q88-Q91
Year: 2016/01 -
Authors: MAI Phi Hung, WANG Dapeng, FURUTA Mamoru
Title: Origin of the alternative current (AC-) gate bias improving the NBIS stability of IGZO TFTs
Journal: ECS Solid State Letters, Vol. 4 , No. 12, pp. Q66-Q68, Electrochemical Society
Year: 2015/12 -
Authors: MAI Phi Hung, WANG Dapeng, FURUTA Mamoru
Title: Investigating Effect of Postannealing Time on Positive Bias Stress Stability of In–Ga–Zn–O TFT by Conductance Method
Journal: IEEE Transaction on Electron Devices, Vol. 62, No. 11, pp. 3697-3702
Year: 2015/11 -
Authors: Y. Koga, T. Matsuda, M. Kimura, WANG Dapeng, FURUTA Mamoru, M. Kasami, S. Tomai, K. Yano
Title: Capacitance Sensor of Frequency Modulation for Integrated Touchpanels Using Amorphous In-Sn-Zn-O Thin-FIlmTransistors
Journal: IEICE Trabsaction on Electronics, Vol. E98-C, No. 11, pp. 1028-1031
Year: 2015/11 -
Authors: G. T. Dang, KAWAHARAMURA, Toshiyuki, FURUTA Mamoru, M. W. Allen
Title: Mist-CVD Grown Sn-Doped α-Ga2O3 MESFETs
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 62, No. 11, pp. 3640-3644
Year: 2015/11 -
Authors: G. T. Dang, KAWAHARAMURA, Toshiyuki, FURUTA Mamoru, S. Saxena, M. W. Allen
Title: Stability of In-Ga-Zn-O metal-semiconductor field-effect-transistors under bias, illumination, and temperature stress
Journal: Applied Physics Letter, Vol. 107, pp. 143504-1-143504-5
Year: 2015/10/05 -
Authors: FURUTA Mamoru, JIANG Jingxin, Gengo Tatsuoka, WANG Dapeng
Title: (Invited) Doping and Defect Passivation in In-Ga-Zn-O by Fluorine
Journal: ECS Transaction, Vol. 67, No. (1), pp. 41-49
Year: 2015/06/14 -
Authors: JIANG Jingxin, Tatsuya Toda, MAI Phi Hung, WANG,Dapeng, FURUTA, Mamoru
Title: Highly stable fluorine-passivated In–Ga–Zn–O thin-film transistors under positive gate bias and temperature stress
Journal: Applied Physics Express, Vol. 7, pp. 114103-01-114103-4
Year: 2014/11/07 -
Authors: Tatuya Toda, WANG,Dapeng, JIANG Jingxin, MAI Phi Hung, FURUTA, Mamoru
Title: Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor
Journal: IEEE Transactions on Electron Devices, Vol. 61, No. 11, pp. 3762-3767
Year: 2014/11 -
Authors: FURUTA, Mamoru, KAWAHARAMURA, Toshiyuki, Takayuki Uchida, WANG,Dapeng, SANADA, Masaru
Title: High-Performance Solution-Processed InGaZnO Thin-Film Transistor Fabricated by Ozone-Assisted Atmospheric Pressure Mist Deposition
Journal: Journal of Display Technology, Vol. 10, No. 11, pp. 934-938, IEEE
Year: 2014/10 -
Authors: JIANG Jingxin, FURUTA, Mamoru, WANG,Dapeng
Title: Self-Aligned Bottom-Gate In-Ga-Zn-O Thin-Film Transistor With Source/Drain Regions Formed by Direct Deposition of Fluorinated Silicon Nitride
Journal: IEEE Electron Device Letters, Vol. 35, No. 9, pp. 933-935
Year: 2014/08 -
Authors: MAI Phi Hung, WANG,Dapeng, Tatsuya Toda, JIANG Jingxin, FURUTA, Mamoru
Title: Quantitative Analysis of Hole-Trapping and Defect-Creation in InGaZnO Thin-Film Transistor under Negative-Bias and Illumination-Stress
Journal: ECS Journal of Solid State Science and Technology, Vol. 3, No. 9, pp. Q3023-Q3026
Year: 2014/07 -
Authors: WANG,Dapeng, MAI Phi Hung, JIANG Jingxin, Tatuya Toda, FURUTA, Mamoru
Title: Suppression of Degradation Induced by Negative Gate Bias and Illumination Stress in Amorphous InGaZnO Thin-Film Transistors by Applying Negative Drain Bias
Journal: ACS Applied Materials & Interfaces, Vol. 6, No. 8, pp. 5713-5718
Year: 2014/04/01 -
Authors: MAI Phi Hung, WANG,Dapeng, JIANG Jingxin, FURUTA, Mamoru
Title: Negative Bias and Illumination Stress Induced Electron Trapping at Back-Channel Interface of InGaZnO Thin-Film Transistor
Journal: ECS Solid State Letters, Vol. 3, No. 3, pp. Q13-Q16
Year: 2014/01/23 -
Authors: WANG,Dapeng, MAI Phi Hung, JIANG Jingxin, Tatsuya Toda, LI, Chaoyang, FURUTA, Mamoru
Title: Effect of drain bias on negative gate bias and illumination stress induced degradation in amorphous InGaZnO thin-film transistors
Journal: Japanese Journal of Applied Physics, Vol. 53, pp. 03CC01-1-03CC01-4
Year: 2014/01 -
Authors: KAWAHARAMURA, Toshiyuki, Takayuki Uchida, SANADA, Masaru, FURUTA, Mamoru
Title: Growth and electrical properties of AlOx grown by mist chemical vapor deposition
Journal: AIP Advances, Vol. 3, pp. 032135-1-032135-9
Year: 2013/08 -
Authors: Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, WANG,Dapeng, FURUTA, Mamoru, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka
Title: Thermal Analysis of amorphous oxide thin-film transistor degradated by combination of joule heating and hot carrier effect
Journal: Applied Physics Letters, Vol. 102, pp. 053506-1-053506-4
Year: 2013/02/06 -
Authors: Tatsuya Toda, KAWAHARAMURA, Toshiyuki, FRUSAWA, Hiroshi, FURUTA, Mamoru
Title: Thin-Film Transistor Using Dielectrophoretic Assembly of Single-Walled Carbon Nanotubes
Journal: ECS Transactions, Vol. 50, No. 8, pp. 223-228
Year: 2012/10/08 -
Authors: FURUTA, Mamoru, KAWAHARAMURA, Toshiyuki, Tatsuya Toda, WANG,Dapeng
Title: A-InGaZnO Thin-Film Transistor with Non-Vacuum Processed InGaZnO/AlOx Gate Dielectric Stack
Journal: ECS Transactions, Vol. 50, No. 8, pp. 95-100
Year: 2012/10/08 -
Authors: Shin-ichi Shimakawa, WANG,Dapeng, FURUTA, Mamoru
Title: Photo Induced Negative Bias Instability of Zinc Oxide Thin-Film Transistors
Journal: Japanese Journal of Applied Physics, Vol. 51, No. 10, pp. 108003-1-108003-2
Year: 2012/09/20 -
Authors: FURUTA, Mamoru, KAWAHARAMURA, Toshiyuki, WANG,Dapeng, Tatsuya Toda, HIRAO, Takashi
Title: Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition
Journal: IEEE Electron Device Letters, Vol. 33, No. 6, pp. 851-853, IEEE
Year: 2012/05/08 -
Authors: KAWAHARAMURA, Toshiyuki, Tai Jan Dan, FURUTA, Mamoru
Title: Successful Growth of Conductive Highly Crystalline Sn-Doped a-Ga2O3 Thin Films by Fine-Channel Mist Chemical Vapor Deposition
Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 040207-1-040207-3, Japan Society of Applied Physics
Year: 2012/03/26 -
Authors: S. Shimakawa, Y. Kamada, KAWAHARAMURA, Toshiyuki, WANG,Dapeng, LI, Chaoyang, S. Fujita, HIRAO, Takashi, FURUTA, Mamoru
Title: Photo-Leakage Current of Thin-Film Transistors with ZnO Channels Formed at Various Oxygen Partial Pressures under Visible Light Irradiation
Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 03CB04-1-03CB04-4, Japan Society of Applied Physics
Year: 2012/03/21 -
Authors: T. Nishida, K. Fuse, FURUTA, Mamoru, Y. Ishikawa, Y. Uraoka
Title: Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation
Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 03CA01-1-03CA01-5, Japan Society of Applied Physics
Year: 2012/03/21 -
Authors: MOMOTA, Sadao, Jango Hangu, Takuya Toyonaga, Hikaru Terauchi, Kazuki Maeda, Jun Taniguchi, HIRAO, Takashi, FURUTA, Mamoru, KAWAHARAMURA, Toshiyuki
Title: Control of swelling height of Si crystal by irradiating Ar beam
Journal: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 1, pp. 552-556, American Scientific Publishers
Year: 2012/01 -
Authors: T. Sakai, H. Seo, S. Aihara, M. Kubota, N. Egami, WANG,Dapeng, FURUTA, Mamoru
Title: A 128×96 Pixel, 50 m Pixel Pitch Transparent Readout Circuit using InGaZnO4 Thin Film Transistor Array with Indium-Tin-Oxide Eletrodes for Organic Image Sensor
Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 010202-1-010202-3
Year: 2011/12/14 -
Authors: M. Kimura, FURUTA, Mamoru, Y. Kamada, T. Hiramatsu, T. Matsuda, FURUTA, Hiroshi, LI, Chaoyang, S. Fujita, HIRAO, Takashi
Title: Extraction of Trap Densities in ZnO Thin-Film Transistors and Dependence on Oxygen Partial Pressure During Sputtering of ZnO Films
Journal: IEEE Transactions on Electron Devices, Vol. 58, No. 9, pp. 3018-3024, IEEE Electron Devices Society
Year: 2011/09 -
Authors: Y. Kamada, S. Fujita, M. Kimura, T. Hiramatsu, T. Matsuda, FURUTA, Mamoru, HIRAO, Takashi
Title: Effect of Chemical Stoichiometry of Channel Region on Bias Instability in ZnO Thin-film Transistors
Journal: Applied Physics Letters, Vol. 98, p. 103512
Year: 2011 -
Authors: FURUTA, Mamoru, Y. Kamada, T. Hiramatsu, LI, Chaoyang, M. Kimura, S. Fujita, HIRAO, Takashi
Title: Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) with a SiOx/SiNx Stacked Gate Insulator
Journal: Japanese Journal of Applied Physics, Vol. 50, p. 03CB09
Year: 2011 -
Authors: T. Hiramatsu, FURUTA, Mamoru, T. Matsuda, LI, Chaoyang, HIRAO, Takashi
Title: Behavior of Oxygen in Zinc Oxide Films Through Thermal Annealing and Its Effect on Sheet Resistance
Journal: Applied Surface Science, Vol. 257, p. 5480
Year: 2011 -
Authors: M. Kimura, FURUTA, Mamoru, Y. Kamada, T. Hiramatsu, T. Matsuda, FURUTA, Hiroshi, LI, Chaoyang, S. Fujita, HIRAO, Takashi
Title: Trap Densities in ZnO Thin-Film Transistors with SiOx Gate Insulators by Several Deposition Conditions
Journal: Electrochemical and Solid-State Letters, Vol. 14, pp. H365-H367
Year: 2011 -
Authors: H. Seo, S. Aihara, T. Watabe, H. Ohtake, T. Sakai, M. Kubota, N. Egami, T. Hiramatsu, FURUTA, Mamoru, HIRAO, Takashi
Title: A 128×96 Pixel Stacked-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin-Film Transistor Readout Circuit
Journal: Japanese Journal of Applied Physics, Vol. 50, p. 024103
Year: 2011 -
Authors: Y. Kamada, S. Fujita, M. Kimura, T. Hiramatsu, T. Matsuda, FURUTA, Mamoru, HIRAO, Takashi
Title: Reduction of Photo-Leakage Current in ZnO Thin-Film Transistors with Dual-Gate Structure
Journal: IEEE Electron Device Letters, Vol. 32, p. 509
Year: 2011 -
Authors: M. Furuta, Y. Kamada, M. Kimura, T. Hiramatsu, T. Matsuda, C. Li, H. Furuta, S. Fujita, T. Hirao
Title: Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channel Deposited by Sputtering under Various Oxygen Partial Pressures
Journal: IEEE Electron Device Letters, Vol. 31, pp. 1257-1259, IEEE
Year: 2010/10/21 -
Authors: H. Furuta, T. Kawaharamura, M. Furuta, K. Kawabata, T. Hirao, T. Komukai, K. Yoshihara, Y. Shimomoto, T. Oguchi
Title: Crystal Structure Analysis of Multiwalled Carbon Nanotube Forests by Newly Developed Cross-Sectional XRD Measurement
Journal: Applied Physics Express, Vol. 3, pp. 105101-1-105101-3, The Japan Society of Applied Physics
Year: 2010/09/17 -
Authors: T. Matsuda, M. Furuta, T. Hiramatsu, H. Furuta, C. Li, T. Hirao
Title: Thermal stability of ZnO thin film prepared by RF-magnetron sputtering evaluated by thermal desorption spectroscopy
Journal: Applied Surface Science, Vol. 256, No. 21, pp. 6350-6353, Elsevier
Year: 2010/08/15 -
Authors: H. Furuta, K. Ishii, K. Okada, M. Furuta, T. Hirao
Title: Simulation Study of the In-plane Type Triode Carbon Nanotube Emitter
Journal: Journal of Vacuum Science & Technology B, Vol. 28, No. 4, pp. 878-881, The AVS Science & Technology Society
Year: 2010/07/30 -
Authors: H. Furuta, T. Kawaharamura, K. Kawabata, M. Furuta, T. Matsuda, C. Li, T. Hirao
Title: High-Density Short-Height Directly Grown CNT Patterned Emitter on Glass
Journal: e-Journal of Surface Science and Nanotechnology, Vol. 8, pp. 336-339, The Surface Science Society of Japan
Year: 2010/07/13 -
Authors: T. Hiramatsu, T. Matsuda, H. Furuta, H. Nitta, T. Kawaharamura, C. Li, M. Furuta, T. Hirao
Title: Effect of Pulsed Substrate Bias on Film Properties of SiO2 Deposited by Inductively Coupled Plasma Deposition
Journal: Japanese Journal Applied Physics, Vol. 49, pp. 03CA03-1-03CA03-4
Year: 2010/03/23 -
Authors: M. Furuta, K. Shimamura, H. Tsubokawa, K. Tokushige, H. Furuta, T. Hirao
Title: Activation Behavior of Boron Implanted Poly-Si on Glass Substrate
Journal: Thin Solid Films, Vol. 518, pp. 4477-4481, Elsevier
Year: 2010/03/01 -
Authors: M. Kimura, Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, FURUTA, Mamoru, HIRAO, Takashi
Title: Mechanism Analysis of Photoleakage Current in ZnO Thin-Film Transistors using Device Simulation
Journal: Applied Physics Letters, Vol. 97, p. 163503
Year: 2010 -
Authors: FURUTA, Mamoru, T. Hiramatsu, HIRAO, Takashi
Title: Enhanced Nucleation of Microcrystalline Silicon Thin-films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) with Low-Frequency Pulse Substrate Bias
Journal: Japanese Journal of Applied Physics, Vol. 49, p. 050202
Year: 2010 -
Authors: FURUTA, Mamoru, LI, Chaoyang, HIRAO, Takashi
Title: Uniformity and Stability in Zinc Oxide Thin-Film Transistors (ZnO TFTs)
Journal: Journal of Society for Information Display, Vol. 18/10, p. 773
Year: 2010 -
Authors: T. Matsuda, FURUTA, Mamoru, T. Hiramatsu, FURUTA, Hiroshi, HIRAO, Takashi
Title: Crystallinity and Resistivity of ZnO Thin Films with Indium Implantation and Post Annealing
Journal: Journal of Vacuum Science and Technology A, Vol. 28, p. 135
Year: 2010 -
Authors: Chaoyang Li, Tokiyoshi Matsuda, Toshiyuki Kawaharamura, Hiroshi Furuta, Mamoru Furuta, Takahiro Hiramatsu, Takashi Hirao, Yoichiro Nakanishi, Keiji Ichi
Title: Comparison of structural and photoluminescence properties of ZnO nano-structures influenced by gas ratio and substrate bias during radio frequency sputtering
Journal: J. Vac. Sci. Technol. B, Vol. 28, No. 2, pp. C2B51-55
Year: 2010 -
Authors: Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, H. Nitta, FURUTA, Mamoru, HIRAO, Takashi
Title: Photo Leakage Current of ZnO TFTs in the Visible Light
Journal: Japanese Journal of Applied Physics, Vol. 49, p. 03CB03
Year: 2010 -
Authors: FURUTA, Mamoru, T. Nakanishi, M. Kimura, T. Hiramatsu, T. Matsuda, KAWAHARAMURA, Toshiyuki, FURUTA, Hiroshi, HIRAO, Takashi
Title: Effect of Surface Treatment of Gate-insulator on Uniformity in Bottom-gate ZnO Thin-film Transistors
Journal: Electrochemical and Solid-State Letters, Vol. 13, pp. H101-H104
Year: 2010 -
Authors: Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, FURUTA, Mamoru, HIRAO, Takashi
Title: Analysis of Subthreshold Photo-Leakage Current in ZnO Thin-Film Transistors using Indium-Ion Implantation
Journal: Solid State Electronics, Vol. 54, p. 1392
Year: 2010 -
Authors: S. Aihara, H. Seo, M. Namba, H. Ohtake, M. Kubota, N. Egami, T. Hiramatsu, T. Matsuda, FURUTA, Mamoru, HIRAO, Takashi
Title: Stacked Image Sensor with Green- and Red-Sensitive Organic Photoconductive Films Applying Zinc-Oxide Thin Film Transistors to a Signal Readout Circuit
Journal: IEEE Trans. on Electron Devices, Vol. 56, No. 11, pp. 2570-2576
Year: 2009 -
Authors: Chaoyang Li, Mamoru Furuta, Tokiyoshi Matsuda, Takahiro Hiramatsu, Hiroshi Furuta, Takashi Hirao
Title: Effects of substrate on the structural, electrical and optical properties of Al-doped ZnO films prepared by RF magnetron sputtering
Journal: Thin Solid Films, Vol. 517, pp. 3265-3268
Year: 2009 -
Authors: T. Hiramatsu, FURUTA, Mamoru, FURUTA, Hiroshi, T. Matsuda, LI, Chaoyang, HIRAO, Takashi
Title: Effect of Substrate Bias on Crystal Structure and Thermal Stability of Sputter-Deposited ZnO Films
Journal: Journal of Crystal Growth, Vol. 311, pp. 282-285
Year: 2009 -
Authors: FURUTA, Mamoru, T. Hiramatsu, T. Matsuda, LI, Chaoyang, FURUTA, Hiroshi, HIRAO, Takashi
Title: Thermal Stability and Sheet Resistance of Undoped ZnO Films Deposited on Insulators
Journal: Electrochemical and Solid-State Letters, Vol. 12, pp. K74-K76
Year: 2009 -
Authors: Chaoyang Li, Toshiyuki Kawaharamura, Tokiyoshi Matsuda, Hiroshi Furuta, Takahiro Hiramatsu, FURUTA, Mamoru, Takashi Hirao
Title: Intense green cathodoluminescence from low-temperature-deposited ZnO film with fluted hexagonal cone nanostructures
Journal: Appl. Phys. Express, Vol. 2, pp. 091601-091603
Year: 2009 -
Authors: FURUTA, Mamoru, T. Hiramatsu, T. Matsuda, LI, Chaoyang, FURUTA, Hiroshi, HIRAO, Takashi
Title: Oxygen Bombardment Effects on Average Crystallite Size of Sputter-Deposited ZnO Films
Journal: Journal of Non-Crystalline Solids, Vol. 354, pp. 1926-1931
Year: 2008 -
Authors: T. Matsuda, FURUTA, Mamoru, T. Hiramatsu, LI, Chaoyang, FURUTA, Hiroshi, HIRAO, Takashi
Title: Influence of Amorphous Buffer Layers on the Crystallinity of Sputter-Deposited Undoped ZnO Films
Journal: Journal of Crystal Growth, Vol. 315, pp. 31-35
Year: 2008 -
Authors: FURUTA, Mamoru, HIRAO, Takashi, T. Hiramatsu, T. Matsuda, LI, Chaoyang, FURUTA, Hiroshi, H. Hokari, M. Yoshida, H. Ishii, M. Kakegawa
Title: Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs
Journal: IEEE Trans. on Electron Devices, Vol. 55, No. 11, pp. 3136-3142
Year: 2008 -
Authors: T. Hiramatsu, FURUTA, Mamoru, FURUTA, Hiroshi, T. Matsuda, HIRAO, Takashi
Title: Influence of Thermal Annealing on Microstructure of Zinc Oxide Films Deposited by RF Magnetron Sputtering
Journal: Japanese Journal of Applied Physics, Vol. 46, pp. 3319-3323
Year: 2007 -
Authors: FURUTA, Mamoru, T. Hiramatsu, T. Matsuda, FURUTA, Hiroshi, HIRAO, Takashi
Title: Effects of Energetic Particle Bombardment on the Microstructure of Zinc Oxide (ZnO) Films Deposited by rf Magnetron Sputtering
Journal: Japanese Journal of Applied Physics, Vol. 46, pp. 4038-4041
Year: 2007 -
Authors: T. Matsuda, FURUTA, Mamoru, T. Hiramatsu, FURUTA, Hiroshi, HIRAO, Takashi
Title: Sheet Resistance and Crystallinity of Ga- and Al- Implanted Zinc Oxide Thin Films with Post Annealing
Journal: Journal of Vacuum Science and Technology A, Vol. 25, pp. 706-710
Year: 2007 -
Authors: T. Hirao, M. Furuta, H. Furuta, T.Matsuda, T. Hiramatsu, H. Hokari, M. Yoshida, M.Ishii, M.Kakegawa
Title: Novel top-gate zinc oxide thin-film transistors (ZnO TFTs) for AMLCDs
Journal: J.of the SID, Vol. 15, pp. 17-22
Year: 2007 -
Authors: H. Furuta, M. Furuta, T.Matsuda, T.Hiramatsu, T. Hirao
Title: SiO2 Insulator Film Synthesized at 100℃ using Tetramethylsilane by Inductively Coupled Plasma-Chemical Vapor Deposition
Journal: Japanese Journal of Applied Physics, Vol. 46, No. 10, pp. L237-L240, The Japan Society of Applied Physics
Year: 2007 -
Authors: Chaoyang Li, Mamoru Furuta, Tokiyoshi Matsuda, Takahiro Hiramatsu, Hiroshi Furuta, Takashi Hirao
Title: RF power and thermal annealing effect on the properties of zinc oxide films prepared by radio frequency magnetron sputtering
Journal: Research Letter in Materials Science, Vol. 1155, pp. 26459-26463
Year: 2007 -
Authors: T. Komukai, K. Aoki, FURUTA, Hiroshi, FURUTA, Mamoru, K. Oura, HIRAO, Takashi
Title: Density Control of Carbon Nanotubes Through The Thickness of Fe/Al Multilayer Catalyst
Journal: Japanese Journal of Applied Physics, Vol. 45, pp. 6043-6045
Year: 2006 -
Authors: K. Aoki, T. Yamamoto, H. Furuta, T. Ikuno, S. Honda, M. Furuta, K. Oura, T. Hirao
Title: Low-Temperature Growth of Carbon Nano-Fiber by Thermal Chemical Vapor Deposition using CuNi Catalyst
Journal: Japanese Journal of Applied Physics, Vol. 45, No. 5329, pp. 5329-5331, The Japan Society of Applied Physics
Year: 2006 -
Authors: T. Komukai, K. Aoki, H. Furuta, M. Furuta, K. Oura, HIRAO, Takashi
Title: Structural Analysis of High-Density Vertically Aligned Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition with Fe/Al Multilayer Catalyst
Journal: Japanese Journal of Applied Physics, Vol. 45, No. 11, pp. 8988-8990, The Japan Society of Applied Physics
Year: 2006 -
Authors: FURUTA, Mamoru, Y. Uraoka, T. Fuyuki
Title: Reliability of Low-temperature Poly-Si TFTs with LDD Structures
Journal: Japanese Journal of Applied Physics, Vol. 42, pp. 4257-4260
Year: 2003 -
Authors: FURUTA, Mamoru, H. Satani, T. Terashita, T. Tamura, Y. Tsuchihashi
Title: Hydrogen Implantation Damage in Polycrystalline Silicon Thin Film Transistors Caused by Ion Doping
Journal: Japanese Journal of Applied Physics, Vol. 41, pp. 1259-1264
Year: 2002 -
Authors: FURUTA, Mamoru, T. Kawamura, T. Yoshioka, Y. Miyata
Title: Bottom-Gate Poly-Si Thin Film Transistors using XeCl Excimer Laser Annealing and Ion Doping
Journal: IEEE Transaction on Electron Devices, Vol. 40, pp. 1964-1969
Year: 1993 -
Authors: Y. Miyata, FURUTA, Mamoru, T. Yoshioka, T. Kawamura
Title: Polycrystalline Silicon Recrystallized with Excimer Laser Irradiation and Impurity Doping using Ion Doping Method
Journal: Journal of Applied Physics, Vol. 73, pp. 3271-3275
Year: 1993 -
Authors: Y. Miyata, FURUTA, Mamoru, T. Yoshioka, T. Kawamura
Title: Low-Temperature Polycrystalline Silicon Thin-Film Transistors for Large-Area Liquid Crystal Display
Journal: Japanese Journal of Applied Physics, Vol. 31, pp. 4559-4562
Year: 1992 -
Authors: K. Okamoto, FURUTA, Mamoru, K. Yamaguchi
Title: Zn and Si Doping in {110} GaAs Epilayers Grown by Metalorganic Chemical Vapor Deposition
Journal: Japanese Journal of Applied Physics, Vol. 27, pp. L2121-L2124
Year: 1988 -
Authors: K. Okamoto, FURUTA, Mamoru, K. Yamaguchi
Title: Lateral Growth on (110) GaAs Substrates by Metalorganic Chemical Vapor Deposition
Journal: Japanese Journal of Applied Physics, Vol. 27, pp. L437-L440
Year: 1988
Keynote lectures ▼
Invited lectures ▼
Notable projects ▼
Awards ▼
Patents ▼
Grants-in-Aid for Scientific Research from the Japanese government ▼
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Project title: Zinc oxide transparent transistor and its application to stacked image sensor
Category: Grant-in-Aid for Scientific Research(C)
Project number:
Project period: 2011/04-2014/03
Total budget amount: 5,330,000 yen
Keywords:
Professor FURUTA Mamoru
Center for Nanotechnology, Research Institute
Laboratory for Structural Nanochemistry, Research Institute