Faculty Members

LANGUAGE ≫ Japanese
magari-yusaku-1.jpg

Assistant Professor
MAGARI Yusaku

Doctor of Engineering, Kochi University of Technology, Japan, 2020

  • Year of birth: 1992
  • Gender: Male
  • Affiliation:
    - School of Engineering Science
    - Graduate School of Enginering
  • researchmap： https://researchmap.jp/magari
Areas of specialization Solid State Physics
Thin Film Technology
Electronic Device Engineering
Laboratory/research office Advanced Electronics Laboratory
Cloud computing, IoT, and AI are driving today’s information society, and the importance of semiconductor devices continues to grow. Our laboratory focuses on oxide semiconductors, a promising class of next-generation materials. We are developing novel thin-film synthesis methods and evaluating their properties, while also promoting research on their application to electronic devices. By exploring the forefront of oxide electronics, we aim to create innovative semiconductor devices that contribute to future society.
Current research topics
Educational background 2020: Doctor, Graduate School of Kochi University of Technology, Japan
Professional background 2025-: Lecturer, School of Engineering Science, Kochi University of Technology
2022-2025: Assistant Professor, Research Institute for Electronic Science, Hokkaido University
2020-2022: Assistant Professor, Department of Physics and Materials Science, Faculty of Interdisciplinary Science and Engineering, S
2020-2025: Assistant Professor, School of Environmental Science and Engineering, Kochi University of Technology
Licenses
Academic societies The Japan Society of Applied Physics

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Courses

* Courses provided in English are shown with (E) mark

Undergraduate school
  • Solid State Physics 1
  • Thermodynamics
Graduate school

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Research activities

Research papers
  1. Authors: Yuzhang Wu, Prashant R. Ghediya, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta, Yusaku Magari
    Title: Thermopower modulation analyses of effective channel thickness for Zn-incorporated In2O3-based thin-film transistors
    Journal: Japanese Journal of Applied Physics, Vol. 63, No. 126501, pp. 1-5
    Year: 2024
  2. Authors: Naoki Okamoto, Xiaoqian Wang, Kotaro Morita, Yuto Kato, Alom Mir Mutakabbir, Yusaku Magari, Mamoru Furuta
    Title: Uniformity and Reliability of Enhancement-Mode Polycrystalline Indium Oxide Thin Film Transistors Formed by Solid-Phase Crystallization
    Journal: IEEE Electron Device Letters, Vol. 45, No. 12, pp. 2403-2406
    Year: 2024
  3. Authors: Prashant R. Ghediya, Yusaku Magari, Hikaru Sadahira, Takashi Endo, Mamoru Furuta, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta
    Title: Reliable Operation in High‐Mobility Indium Oxide Thin Film Transistors
    Journal: Small Methods, Vol. 9, No. 1, pp. 1-8
    Year: 2025
  4. Authors: Yuzhang Wu, Yusaku Magari, Prashant Ghediya, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta
    Title: High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors
    Journal: Japanese Journal of Applied Physics, Vol. 63, No. 076504, pp. 1-6
    Year: 2024
  5. Authors: Zhiping Bian, Mitsuki Yoshimura, Ahrong Jeong, Haobo Li, Takashi Endo, Yasutaka Matsuo, Yusaku Magari, Hidekazu Tanaka, Hiromichi Ohta
    Title: Solid-State Electrochemical Thermal Switches with Large Thermal Conductivity Switching Widths
    Journal: Advanced Science, Vol. 11, No. 2401331, pp. 1-6
    Year: 2024
  6. Authors: Xiaoqian Wang, Yusaku Magari, Mamoru Furuta
    Title: Nucleation and grain growth in low-temperature rapid solid-phase crystallization of hydrogen-doped indium oxide
    Journal: Japanese Journal of Applied Physics, Vol. 63, No. 03SP38 , pp. 1-7
    Year: 2024
  7. Authors: Prashant Ghediya, Hui Yang, Takashi Fujimoto, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, Hiromichi Ohta
    Title: Improved Electron Transport Properties of Zn-Rich In–Ga–Zn–O Thin-Film Transistors
    Journal: Journal of Physical Chemistry C, Vol. 127, No. 5, pp. 2622-2627
    Year: 2023
  8. Authors: Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, Hiromichi Ohta
    Title: Thermopower Modulation Analyses of High-Mobility Transparent Amorphous Oxide Semiconductor Thin-Film Transistors
    Journal: ACS Applied Electronic Materials, Vol. 4, No. 10, pp. 5081-5086
    Year: 2022
  9. Authors: Yusaku Magari, Wenchang Yeh, Toshiaki Ina, Mamoru Furuta
    Title: Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In2O3 (In2O3:H)
    Journal: Nanomaterials, Vol. 12, No. 2958, pp. 1-10
    Year: 2022
  10. Authors: Wenchang Yeh, Kaisei Ohtoge, Yusaku Magari
    Title: Bottom gate single crystal Si thin-film transistors fabricated by all sputtering processes
    Journal: Japanese Journal of Applied Physics, Vol. 61, No. 086501, pp. 1-6
    Year: 2022
  11. Authors: Yusaku Magari, Taiki Kataoka, Wenchang Yeh, Mamoru Furuta
    Title: High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors
    Journal: Nature Communications, Vol. 13, No. 1078, pp. 1-8
    Year: 2022
  12. Authors: Rostislav Velichko, Yusaku Magari, Mamoru Furuta
    Title: Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications
    Journal: Materials, Vol. 15, No. 334, pp. 1-14
    Year: 2022
  13. Authors: Taiki Kataoka, Yusaku Magari, Hisao Makino, Mamoru Furuta
    Title: Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors
    Journal: Materials, Vol. 15, No. 187, pp. 1-11
    Year: 2021
  14. Authors: Rostislav Velichko, Yusaku Magari, Hisao Makino, Mamoru Furuta
    Title: Investigation of the effect of adding a moderate amount of hydrogen on the properties of tin oxide films deposited by DC magnetron sputtering
    Journal: Japanese Journal of Applied Physics, Vol. 60, No. 055503, pp. 1-6
    Year: 2021
  15. Authors: Shuya Kono, Yusaku Magari, Marin Mori, S G Mehadi Aman, Norbert Fruehauf, Hiroshi Furuta, Mamoru Furuta
    Title: Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices
    Journal: Japanese Journal of Applied Physics, Vol. 60, No. SBBM05, pp. 1-6
    Year: 2021
  16. Authors: Yusaku Magari, FURUTA Mamoru
    Title: Effects of water and hydrogen introduction during In–Ga–Zn–O sputtering on the performance of low-temperature processed thin-film transistors
    Journal: Japanese Journal of Applied Physics, Vol. 60, No. SBBM04, pp. 1-5
    Year: 2021
  17. Authors: Yusaku Magari, S G Mehadi Aman, Daichi Koretomo, Kentaro Masuda, Kenta Shimpo, Hisao Makino, Mutsumi Kimura, Mamoru Furuta
    Title: Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes
    Journal: ACS Applied Materials & Interfaces, Vol. 12, No. 42, pp. 47739-47746
    Year: 2020
  18. Authors: Daichi Koretomo, Shuhei Hamada, Marin Mori, Yusaku Magari, Mamoru Furuta
    Title: Marked improvement in reliability of 150 °C processed IGZO thin-film transistors by applying hydrogenated IGZO as a channel material
    Journal: Applied Physics Express, Vol. 13, No. 076501, pp. 1-4
    Year: 2020
  19. Authors: Yusaku Magari, Hisao Makino, Shinsuke Hashimoto, Mamoru Furuta
    Title: Origin of work function engineering of silver oxide for an In–Ga–Zn–O Schottky diode
    Journal: Applied Surface Science, Vol. 512, No. 144519, pp. 1-8
    Year: 2020
  20. Authors: Daichi Koretomo, Shuhei Hamada, Yusaku Magari, Mamoru Furuta
    Title: Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors
    Journal: Materials, Vol. 13, No. 8, pp. 1-12
    Year: 2020
  21. Authors: Yusaku Magari, S G Mehadi Aman, Daichi Koretomo, Kentaro Masuda, Kenta Shimpo, Mamoru Furuta
    Title: Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel
    Journal: Japanese Journal of Applied Physics, Vol. 59, No. SGGJ04, pp. 1-5
    Year: 2020
  22. Authors: Ayata Kurasaki, Ryo Tanaka, Sumio Sugisaki, Tokiyoshi Matsuda, Daichi Koretomo, Yusaku Magari, Mamoru Furuta, Mutsumi Kimura
    Title: Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density
    Journal: Materials, Vol. 12, No. 3236, pp. 1-8
    Year: 2019
  23. Authors: Mamoru Furuta, Daichi Koretomo, Yusaku Magari, S G Mehadi Aman, Ryunosuke Higashi, Shuhei Hamada
    Title: Heterojunction channel engineering to enhance performance and reliability of amorphous In–Ga–Zn–O thin-film transistors
    Journal: Japanese Journal of Applied Physics, Vol. 58, No. 090604, pp. 1-9
    Year: 2019
  24. Authors: Sumio Sugisaki, Tokiyoshi Matsuda, Mutsunori Uenuma, Toshihide Nabatame, Yasuhiko Nakashima, Takahito Imai, Yusaku Magari, Daichi Koretomo, Mamoru Furuta, Mutsumi Kimura
    Title: Memristive characteristic of an amorphous Ga-Sn-O thin-film device
    Journal: Scientific Reports, Vol. 9, No. 2757, pp. 1-7
    Year: 2019
  25. Authors: S G Mehadi Aman, Yusaku Magari, Kenta Shimpo, Yuya Hirota, Hisao Makino, Daichi Koretomo, Mamoru Furuta
    Title: Low-temperature (150 °C) activation of Ar+O2+H2-sputtered In–Ga–Zn–O for thin-film transistors
    Journal: Applied Physics Express, Vol. 11, No. 081101, pp. 1-4
    Year: 2018
  26. Authors: S G Mehadi Aman, Daichi Koretomo, Yusaku Magari, Mamoru Furuta
    Title: Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In–Ga–Zn–O Thin-Film Transistors
    Journal: IEEE Transactions on Electron Devices, Vol. 65, No. 8, pp. 3257-3263
    Year: 2018
  27. Authors: Yusaku Magari, Hisao Makino, Mamoru Furuta
    Title: Carrier Generation Mechanism and Origin of Subgap States in Ar- and He-Plasma-Treated In–Ga–Zn–O Thin Films
    Journal: ECS Journal of Solid State Science and Technology, Vol. 6, No. 8, pp. Q101-Q107
    Year: 2017
  28. Authors: Tatsuya Toda, Gengo Tatsuoka, Yusaku Magari, Mamoru Furuta
    Title: High-Performance Top-Gate and Self-Aligned In–Ga–Zn-O Thin-Film Transistor Using Coatable Organic Insulators Fabricated at 150 °C
    Journal: IEEE Electron Device Letters, Vol. 37, No. 8, pp. 1006-1009
    Year: 2016

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Social activities

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