Research papers |
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Authors: Naoki Okamoto, WANG Xiaoqian, Kotaro Morita, Yuto Kato, Alom Mir Mutakabbir, Magari Yusaku, FURUTA Mamoru
Title: Uniformity and Reliability of Enhancement-Mode Polycrystalline Indium Oxide Thin Film Transistors Formed by Solid-Phase Crystallization
Journal: IEEE Electron Device Letters, Vol. 45, No. 12, pp. 2403-2406, IEEE
Year: 2024
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Authors: Prashant R. Ghediya, Yusaku Magari, Hikaru Sadahira, Takashi Endo, Mamoru Furuta, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta
Title: Reliable Operation in High-Mobility Indium Oxide Thin Film Transistors
Journal: Small methods, pp. 2400578-1-2400578-8
Year: 2024
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Authors: Yuzhu Pan, Xin Wang, Yuhan Liao, Yubing Xu, Yuwei Li, Qing Li, Xiaobing Zhang, Jing Chen, Zhuoya Zhu, Zhiwei Zhao, Elias Emeka Elemike, Mamoru Furuta, Wei Lei
Title: Epitaxial Perovskite Single-Crystalline Heterojunctions for Filter-Free Ultra-Narrowband Detection with Tunable Spectral Responses
Journal: ACS Applied Materials & Interfaces, Vol. 14(44), pp. 50331-50342
Year: 2022
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Authors: Y. Magari, W. Yeh, T. Ina, Mamoru Furuta
Title: Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In2O3 (In2O3:H)
Journal: Nanomaterials, Vol. 12(17), pp. 2958-1-2958-10
Year: 2022
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Authors: Yusaku Magari, Taiki Kataoka, Wenchang Yeh, Mamoru Furuta
Title: High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors
Journal: Nature communications, Vol. 13, pp. 1078-1-1078-8
Year: 2022
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Authors: Velichko Rostislav, Yusaku Magari, Mamoru Furuta
Title: Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications
Journal: Materials, Vol. 15, No. 1, pp. 334-1-334-12, MDPI
Year: 2022
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Authors: Taiki Kataoka, Yusaku Magari, Hisao Makino, Mamoru Furuta
Title: Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors
Journal: Materials, Vol. 15, No. 1, pp. 187-1-187-11, MDPI
Year: 2021
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Authors: Hyo-Eun Kim, Hye-Won Jang, Mamoru Furuta, Jeonghan Yoon, Saeroonter Oh, Sung-Min Yoon
Title: Impact of organic inter-layer dielectric for improvement in mechanicalflexibility of self-aligned coplanar in-Ga-Zn-O thin-film transistor
Journal: Organic Electronics, Vol. 96, pp. 106223-1-106223-7
Year: 2021
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Authors: Velichko Rostislav, MAGARI Yusaku, Hisao Makino, Mamoru Furuta
Title: Investigation of the effect of adding a moderate amount of hydrogen on the properties of tin oxide films deposited by DC magnetron sputtering
Journal: Japanese Journal of Applied Physics, Vol. 60, pp. 055503-1-055503-6
Year: 2021
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Authors: Shuya Kono, Yusaku Magari, Marin Mori, S G Mehadi Aman, Norbert Fruehauf, Hiroshi Furuta, Mamoru Furuta
Title: Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices
Journal: Japanese Journal of Applied Physics, Vol. 60, pp. SBBM05-1-SBBM05-6
Year: 2021
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Authors: Yusaku Magari, Mamoru Furuta
Title: Effects of water and hydrogen introduction during In–Ga–Zn–O sputtering on the performance of low-temperature processed thin-film transistors
Journal: Japanese Journal of Applied Physics, Vol. 60, pp. SBBM04-1-SBBM04-5
Year: 2021
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Authors: Yusaku Magari, S G Mehadi Aman, Daichi Sasaki, Kentaro Masuda, Kenta Shimpo, Hisao Makino, Mutsumi Kimura, Mamoru Furuta
Title: Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes
Journal: ACS Applied Materials and Interfaces, Vol. 12, pp. 47739-47746
Year: 2020
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Authors: Daichi Koretomo, Shuhei Hamada, Marin Mori, Yusaku Magari, Mamoru Furuta
Title: Marked improvement in reliability of 150 °C-processed In–Ga–Zn–O (IGZO) thin-film transistors by applying hydrogenated IGZO as a channel material
Journal: Applied Physics Express, Vol. 13, pp. 076501-1-076501-4
Year: 2020
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Authors: Daichi Sasaki, Shuhei Hamada, Yusaku Magari, Mamoru Furuta
Title: Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors
Journal: Materials, Vol. 13, pp. 1935-1-1935-12
Year: 2020
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Authors: Dapeng Wang, Mamoru Furuta, Shigekazu Tomai, Koki Yano
Title: Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses
Journal: Nanomaterials, Vol. 10, No. 4, pp. 617-1-617-10
Year: 2020
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Authors: Yusaku Magari, S G Mehadi Aman, Daichi Sasaki, Kentaro Masuda, Kenta Shimpo, Mamoru Furuta
Title: Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel
Journal: Japanese Journal of Applied Physics, Vol. 59, pp. SGGJ04-1-SGGJ04-5
Year: 2020
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Authors: Hyo-Eun Kim, Mamoru Furuta, Sung-Min Yoon
Title: A Facile Doping Process of the Organic Inter-Layer Dielectric for Self-Aligned Coplanar In-Ga-Zn-O Thin-Film Transistors
Journal: IEEE Electron Device Letters, Vol. 41, No. 3, pp. 393-396
Year: 2020
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Authors: Dapeng Wang, Dan Li, Wenjing Zhao, Mamoru Furuta
Title: Defect gradient control in amorphous InGaZnO for high-performance thin-film transistors
Journal: Journal of Phisics D:Applied Physics, Vol. 53, pp. 1351404-1-1351404-7
Year: 2020
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Authors: Ayata Kurasaki, Ryo Tanaka, Sumio Sugisaki, Tokiyoshi Matsuda, Daichi Sasaki, Yusaku Magari, Mamoru Furuta, Mutsumi Kimura
Title: Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density
Journal: Materials, Vol. 12, pp. 3236-1-3236-8, MDPI
Year: 2019
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Authors: Dang Thai Giang, Martin Allen, Mamoru Furuta, Toshiyuki Kawaharamura
Title: Electronic devices fabricated on mist-CVD-grown oxide semiconductors and their applications
Journal: Japanese Journal of Applied Physics, Vol. 58, p. 090606
Year: 2019
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Authors: Dapeng Wang, Mamoru Furuta
Title: Quantitative analysis of annealing-induced instabilities of
photo-leakage current and negative-bias-illumination-stress
in a-InGaZnO thin-film transistors
Journal: Beilstein Journal of Nanotechnology, Vol. 10, pp. 1125-1130
Year: 2019
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Authors: Mamoru Furuta, Daichi Koretomo, Yusaku Magari, S G Mehadi Aman, Ryunosuke Higashi, Shuhei Hamada
Title: Heterojunction channel engineering to enhance performance and reliability of amorphous In–Ga–Zn–O thin-film transistors
Journal: Japanese Journal of Applied Physics, Vol. 58, No. 9, pp. 090604-1-090604-9
Year: 2019
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Authors: Sol-Mi Kwak, Hyeong-Rae Kim, Hye-Won Jang, Ji-Hee Yang, Mamoru Furuta, Sung-Min Yoon
Title: Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator.
Journal: Organic Electronics, Vol. 71, pp. 7-13
Year: 2019
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Authors: C. J. Koswaththage, T. Higashizako, T. Okada, T. Sadoh, Mamoru Furuta, B. S. Bae, T. Noguchi
Title: High mobility sputtered InSb film by blue laser diode annealing
Journal: AIP advances, Vol. 9, No. 4, pp. 045009-1-045009-5
Year: 2019
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Authors: Dapeng Wang, Wenjing Zhao, Mamoru Furuta
Title: Collaborative optimization of thermal budget annealing and active layer defect content enhancing electrical characteristics and bias stress stability in InGaZnO thin-film
Journal: Journal of Physics D: Applied Physics, Vol. 52, pp. 235101-1-235101-6
Year: 2019
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Authors: sumio sugisaki, tokiyoshi Matsuda, Mutsunori Uenuma, Toshihide Nabatame, Yasuhiko Nakashima, Takahito Imai, Yusaku Magari, Daichi Koretomo, Mamoru Furuta, Mustumi Kimura
Title: Memristive characteristic of an amorphous Ga-Sn-O thin-film device
Journal: Scientific reports, Vol. 9, pp. 2757-1-2757-7
Year: 2019
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Authors: Daichi Koretomo, Yuta Hashimoto, Shuhei Hamada, Miki Miyanaga, Mamoru Furuta
Title: Influence of a SiO2 passivation on electrical properties and reliability of In–W–Zn–O thin-film transistor
Journal: Japanese Journal of Applied Physics, Vol. 58, No. 1, pp. 018003-1-018003-3, Japan Society of Applied Physics
Year: 2018
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Authors: Dapeng Wang, Mamoru Furuta
Title: Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses
Journal: Beilstein Journal of Nanotechnology, Vol. 9, pp. 2573-2580
Year: 2018
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Authors: S G Mehadi Aman, Daichi Koretomo, Yusaku Magari, Mamoru Furuta
Title: Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In–Ga–Zn–O Thin-Film Transistors
Journal: IEEE Transaction on Electron Devices, Vol. 65, No. 8, pp. 3257-3263, IEEE
Year: 2018
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Authors: Aman S G Mehadi, Yusaku Magari, Kenta Shimpo, Yuya Hirota, Hisao Makino, Daichi Koretomo, Mamoru Furuta
Title: Low temperature (150 ℃) activation of Ar+O2+H2 sputtered In-Ga-Zn-O thin film transistors
Journal: Applied Physics Express, Vol. 11, No. 8, pp. 0811101-1-0811101-4
Year: 2018
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Authors: Aman S G Mehadi, Mamoru Furuta
Title: Correlation between passivation film density and reliability pf In–Ga–Zn–O thin-film transistors
Journal: Japanese Journal of Applied Physics, Vol. 57, pp. 088001-1-088001-2
Year: 2018
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Authors: Dapeng Wang, Wenjing Zhao, Hua Li, Mamoru Furuta
Title: Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses
Journal: Materials, Vol. 11, No. 4, pp. 559-1-559-11
Year: 2018
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Authors: Mamoru Furuta, Yusaku Magari, Shinsuke Hashimoto, Kenichiro Hamada
Title: Low-temperature Processed InGaZnO MES-FET for Flexible Device Applicatio
Journal: ECS transaction, Vol. 79, No. 1, pp. 43-48
Year: 2017
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Authors: Tokiyoshi MATSUDA, Kenta UMEDA, Yuta KATO, Daiki NISHIMOTO, Mamoru Furuta, Mustumi KIMURA
Title: Rare-metal-free high-performance Ga-Sn-O thin film transistor
Journal: Scientific Reports, Vol. 7, p. 44326
Year: 2017
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Authors: WANG Dapeng, JIANG Jingxin, FURUTA Mamoru
Title: Investigation of Carrier Generation Mechanism in Fluorine-Doped n+-In–Ga–Zn-O for Self-Aligned Thin-Film Transistors
Journal: IEEE Journal of Display Technology, Vol. 12, No. 3, pp. 258-262, IEEE
Year: 2016
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Authors: Kahori Kise, Mami Fujii, Satoshi Urakaswa, Haruka Yamazaki, Emi Kawashima, Shigekazu Tomai, Koki Yano, WANG Dapeng, FURUTA Mamoru, Yasuaki Ishikawa, Yukiharu Uraoka
Title: Self-heating induced instability of oxide thin film transistors under dynamic stress
Journal: Applied Physics Letters, Vol. 108, p. 023501
Year: 2016
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Authors: FURUTA Mamoru, JIANG Jingxin, MAI Phi Hung, Tatsuya Toda, WANG Dapeng, Gengo Tatsuoka
Title: Suppression of Negative Gate Bias and Illumination Stress Degradation by Fluorine-Passivated In-Ga-Zn-O Thin-Film Transistors
Journal: ECS Journal of Solid State Science and Technology, Vol. 5, No. 3, pp. Q88-Q91
Year: 2016
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Authors: MAI Phi Hung, WANG Dapeng, FURUTA Mamoru
Title: Origin of the alternative current (AC-) gate bias improving the NBIS stability of IGZO TFTs
Journal: ECS Solid State Letters, Vol. 4 , No. 12, pp. Q66-Q68, Electrochemical Society
Year: 2015
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Authors: G. T. Dang, KAWAHARAMURA Toshiyuki, FURUTA Mamoru, M. W. Allen
Title: Mist-CVD Grown Sn-Doped α-Ga2O3 MESFETs
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 62, No. 11, pp. 3640-3644
Year: 2015
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Authors: Y. Koga, T. Matsuda, M. Kimura, WANG Dapeng, FURUTA Mamoru, M. Kasami, S. Tomai, K. Yano
Title: Capacitance Sensor of Frequency Modulation for Integrated Touchpanels Using Amorphous In-Sn-Zn-O Thin-FIlmTransistors
Journal: IEICE Trabsaction on Electronics, Vol. E98-C, No. 11, pp. 1028-1031
Year: 2015
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Authors: MAI Phi Hung, WANG Dapeng, FURUTA Mamoru
Title: Investigating Effect of Postannealing Time on Positive Bias Stress Stability of In–Ga–Zn–O TFT by Conductance Method
Journal: IEEE Transaction on Electron Devices, Vol. 62, No. 11, pp. 3697-3702
Year: 2015
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Authors: G. T. Dang, KAWAHARAMURA Toshiyuki, FURUTA Mamoru, S. Saxena, M. W. Allen
Title: Stability of In-Ga-Zn-O metal-semiconductor field-effect-transistors under bias, illumination, and temperature stress
Journal: Applied Physics Letter, Vol. 107, pp. 143504-1-143504-5
Year: 2015
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Authors: FURUTA Mamoru, JIANG Jingxin, Gengo Tatsuoka, WANG Dapeng
Title: (Invited) Doping and Defect Passivation in In-Ga-Zn-O by Fluorine
Journal: ECS Transaction, Vol. 67, No. (1), pp. 41-49
Year: 2015
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Authors: JIANG Jingxin, Tatsuya Toda, MAI Phi Hung, WANGDapeng, FURUTA Mamoru
Title: Highly stable fluorine-passivated In–Ga–Zn–O thin-film transistors under positive gate bias and temperature stress
Journal: Applied Physics Express, Vol. 7, pp. 114103-01-114103-4
Year: 2014
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Authors: Tatuya Toda, WANGDapeng, JIANG Jingxin, MAI Phi Hung, FURUTA Mamoru
Title: Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor
Journal: IEEE Transactions on Electron Devices, Vol. 61, No. 11, pp. 3762-3767
Year: 2014
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Authors: FURUTA Mamoru, KAWAHARAMURA Toshiyuki, Takayuki Uchida, WANGDapeng, SANADA Masaru
Title: High-Performance Solution-Processed InGaZnO Thin-Film Transistor Fabricated by Ozone-Assisted Atmospheric Pressure Mist Deposition
Journal: Journal of Display Technology, Vol. 10, No. 11, pp. 934-938, IEEE
Year: 2014
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Authors: JIANG Jingxin, FURUTA Mamoru, WANGDapeng
Title: Self-Aligned Bottom-Gate In-Ga-Zn-O Thin-Film Transistor With Source/Drain Regions Formed by Direct Deposition of Fluorinated Silicon Nitride
Journal: IEEE Electron Device Letters, Vol. 35, No. 9, pp. 933-935
Year: 2014
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Authors: MAI Phi Hung, WANGDapeng, Tatsuya Toda, JIANG Jingxin, FURUTA Mamoru
Title: Quantitative Analysis of Hole-Trapping and Defect-Creation
in InGaZnO Thin-Film Transistor under Negative-Bias
and Illumination-Stress
Journal: ECS Journal of Solid State Science and Technology, Vol. 3, No. 9, pp. Q3023-Q3026
Year: 2014
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Authors: WANGDapeng, MAI Phi Hung, JIANG Jingxin, Tatuya Toda, FURUTA Mamoru
Title: Suppression of Degradation Induced by Negative Gate Bias and Illumination Stress in Amorphous InGaZnO Thin-Film Transistors by Applying Negative Drain Bias
Journal: ACS Applied Materials & Interfaces, Vol. 6, No. 8, pp. 5713-5718
Year: 2014
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Authors: MAI Phi Hung, WANGDapeng, JIANG Jingxin, FURUTA Mamoru
Title: Negative Bias and Illumination Stress Induced Electron Trapping at Back-Channel Interface of InGaZnO Thin-Film Transistor
Journal: ECS Solid State Letters, Vol. 3, No. 3, pp. Q13-Q16
Year: 2014
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Authors: WANGDapeng, MAI Phi Hung, JIANG Jingxin, Tatsuya Toda, LI Chaoyang, FURUTA Mamoru
Title: Effect of drain bias on negative gate bias and illumination stress induced degradation in amorphous InGaZnO thin-film transistors
Journal: Japanese Journal of Applied Physics, Vol. 53, pp. 03CC01-1-03CC01-4
Year: 2014
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Authors: KAWAHARAMURA Toshiyuki, Takayuki Uchida, SANADA Masaru, FURUTA Mamoru
Title: Growth and electrical properties of AlOx grown by mist chemical vapor deposition
Journal: AIP Advances, Vol. 3, pp. 032135-1-032135-9
Year: 2013
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Authors: Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, WANGDapeng, FURUTA Mamoru, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka
Title: Thermal Analysis of amorphous oxide thin-film transistor degradated by combination of joule heating and hot carrier effect
Journal: Applied Physics Letters, Vol. 102, pp. 053506-1-053506-4
Year: 2013
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Authors: Tatsuya Toda, KAWAHARAMURA Toshiyuki, FRUSAWA Hiroshi, FURUTA Mamoru
Title: Thin-Film Transistor Using Dielectrophoretic Assembly of Single-Walled Carbon Nanotubes
Journal: ECS Transactions, Vol. 50, No. 8, pp. 223-228
Year: 2012
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Authors: FURUTA Mamoru, KAWAHARAMURA Toshiyuki, Tatsuya Toda, WANGDapeng
Title: A-InGaZnO Thin-Film Transistor with Non-Vacuum Processed InGaZnO/AlOx Gate Dielectric Stack
Journal: ECS Transactions, Vol. 50, No. 8, pp. 95-100
Year: 2012
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Authors: Shin-ichi Shimakawa, WANGDapeng, FURUTA Mamoru
Title: Photo Induced Negative Bias Instability of Zinc Oxide Thin-Film Transistors
Journal: Japanese Journal of Applied Physics, Vol. 51, No. 10, pp. 108003-1-108003-2
Year: 2012
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Authors: FURUTA Mamoru, KAWAHARAMURA Toshiyuki, WANGDapeng, Tatsuya Toda, HIRAO Takashi
Title: Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition
Journal: IEEE Electron Device Letters, Vol. 33, No. 6, pp. 851-853, IEEE
Year: 2012
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Authors: KAWAHARAMURA Toshiyuki, Tai Jan Dan, FURUTA Mamoru
Title: Successful Growth of Conductive Highly Crystalline Sn-Doped a-Ga2O3 Thin Films by Fine-Channel Mist Chemical Vapor Deposition
Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 040207-1-040207-3, Japan Society of Applied Physics
Year: 2012
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Authors: T. Nishida, K. Fuse, FURUTA Mamoru, Y. Ishikawa, Y. Uraoka
Title: Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation
Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 03CA01-1-03CA01-5, Japan Society of Applied Physics
Year: 2012
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Authors: S. Shimakawa, Y. Kamada, KAWAHARAMURA Toshiyuki, WANGDapeng, LI Chaoyang, S. Fujita, HIRAO Takashi, FURUTA Mamoru
Title: Photo-Leakage Current of Thin-Film Transistors with ZnO Channels Formed at Various Oxygen Partial Pressures under Visible Light Irradiation
Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 03CB04-1-03CB04-4, Japan Society of Applied Physics
Year: 2012
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Authors: MOMOTA Sadao, Jango Hangu, Takuya Toyonaga, Hikaru Terauchi, Kazuki Maeda, Jun Taniguchi, HIRAO Takashi, FURUTA Mamoru, KAWAHARAMURA Toshiyuki
Title: Control of swelling height of Si crystal by irradiating Ar beam
Journal: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 1, pp. 552-556, American Scientific Publishers
Year: 2012
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Authors: T. Sakai, H. Seo, S. Aihara, M. Kubota, N. Egami, WANGDapeng, FURUTA Mamoru
Title: A 128×96 Pixel, 50 m Pixel Pitch Transparent Readout Circuit using InGaZnO4 Thin Film Transistor Array with Indium-Tin-Oxide Eletrodes for Organic Image Sensor
Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 010202-1-010202-3
Year: 2011
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Authors: M. Kimura, FURUTA Mamoru, Y. Kamada, T. Hiramatsu, T. Matsuda, FURUTA Hiroshi, LI Chaoyang, S. Fujita, HIRAO Takashi
Title: Extraction of Trap Densities in ZnO Thin-Film Transistors and Dependence on Oxygen Partial Pressure During Sputtering of ZnO Films
Journal: IEEE Transactions on Electron Devices, Vol. 58, No. 9, pp. 3018-3024, IEEE Electron Devices Society
Year: 2011
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Authors: M. Kimura, FURUTA Mamoru, Y. Kamada, T. Hiramatsu, T. Matsuda, FURUTA Hiroshi, LI Chaoyang, S. Fujita, HIRAO Takashi
Title: Trap Densities in ZnO Thin-Film Transistors with SiOx Gate Insulators by Several Deposition Conditions
Journal: Electrochemical and Solid-State Letters, Vol. 14, pp. H365-H367
Year: 2011
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Authors: Y. Kamada, S. Fujita, M. Kimura, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi
Title: Effect of Chemical Stoichiometry of Channel Region on Bias Instability in ZnO Thin-film Transistors
Journal: Applied Physics Letters, Vol. 98, p. 103512
Year: 2011
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Authors: Y. Kamada, S. Fujita, M. Kimura, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi
Title: Reduction of Photo-Leakage Current in ZnO Thin-Film Transistors with Dual-Gate Structure
Journal: IEEE Electron Device Letters, Vol. 32, p. 509
Year: 2011
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Authors: FURUTA Mamoru, Y. Kamada, T. Hiramatsu, LI Chaoyang, M. Kimura, S. Fujita, HIRAO Takashi
Title: Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) with a SiOx/SiNx Stacked Gate Insulator
Journal: Japanese Journal of Applied Physics, Vol. 50, p. 03CB09
Year: 2011
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Authors: T. Hiramatsu, FURUTA Mamoru, T. Matsuda, LI Chaoyang, HIRAO Takashi
Title: Behavior of Oxygen in Zinc Oxide Films Through Thermal Annealing and Its Effect on Sheet Resistance
Journal: Applied Surface Science, Vol. 257, p. 5480
Year: 2011
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Authors: H. Seo, S. Aihara, T. Watabe, H. Ohtake, T. Sakai, M. Kubota, N. Egami, T. Hiramatsu, FURUTA Mamoru, HIRAO Takashi
Title: A 128×96 Pixel Stacked-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin-Film Transistor Readout Circuit
Journal: Japanese Journal of Applied Physics, Vol. 50, p. 024103
Year: 2011
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Authors: M. Furuta, Y. Kamada, M. Kimura, T. Hiramatsu, T. Matsuda, C. Li, H. Furuta, S. Fujita, T. Hirao
Title: Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channel Deposited by Sputtering under Various Oxygen Partial Pressures
Journal: IEEE Electron Device Letters, Vol. 31, pp. 1257-1259, IEEE
Year: 2010
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Authors: H. Furuta, T. Kawaharamura, M. Furuta, K. Kawabata, T. Hirao, T. Komukai, K. Yoshihara, Y. Shimomoto, T. Oguchi
Title: Crystal Structure Analysis of Multiwalled Carbon Nanotube Forests by Newly Developed Cross-Sectional XRD Measurement
Journal: Applied Physics Express, Vol. 3, pp. 105101-1-105101-3, The Japan Society of Applied Physics
Year: 2010
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Authors: T. Matsuda, M. Furuta, T. Hiramatsu, H. Furuta, C. Li, T. Hirao
Title: Thermal stability of ZnO thin film prepared by RF-magnetron sputtering evaluated by thermal desorption spectroscopy
Journal: Applied Surface Science, Vol. 256, No. 21, pp. 6350-6353, Elsevier
Year: 2010
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Authors: H. Furuta, K. Ishii, K. Okada, M. Furuta, T. Hirao
Title: Simulation Study of the In-plane Type Triode Carbon Nanotube Emitter
Journal: Journal of Vacuum Science & Technology B, Vol. 28, No. 4, pp. 878-881, The AVS Science & Technology Society
Year: 2010
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Authors: H. Furuta, T. Kawaharamura, K. Kawabata, M. Furuta, T. Matsuda, C. Li, T. Hirao
Title: High-Density Short-Height Directly Grown CNT Patterned Emitter on Glass
Journal: e-Journal of Surface Science and Nanotechnology, Vol. 8, pp. 336-339, The Surface Science Society of Japan
Year: 2010
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Authors: T. Hiramatsu, T. Matsuda, H. Furuta, H. Nitta, T. Kawaharamura, C. Li, M. Furuta, T. Hirao
Title: Effect of Pulsed Substrate Bias on Film Properties of SiO2 Deposited by Inductively Coupled Plasma Deposition
Journal: Japanese Journal Applied Physics, Vol. 49, pp. 03CA03-1-03CA03-4
Year: 2010
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Authors: M. Furuta, K. Shimamura, H. Tsubokawa, K. Tokushige, H. Furuta, T. Hirao
Title: Activation Behavior of Boron Implanted Poly-Si on Glass Substrate
Journal: Thin Solid Films, Vol. 518, pp. 4477-4481, Elsevier
Year: 2010
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Authors: Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, H. Nitta, FURUTA Mamoru, HIRAO Takashi
Title: Photo Leakage Current of ZnO TFTs in the Visible Light
Journal: Japanese Journal of Applied Physics, Vol. 49, p. 03CB03
Year: 2010
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Authors: T. Matsuda, FURUTA Mamoru, T. Hiramatsu, FURUTA Hiroshi, HIRAO Takashi
Title: Crystallinity and Resistivity of ZnO Thin Films with Indium Implantation and Post Annealing
Journal: Journal of Vacuum Science and Technology A, Vol. 28, p. 135
Year: 2010
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Authors: FURUTA Mamoru, T. Hiramatsu, HIRAO Takashi
Title: Enhanced Nucleation of Microcrystalline Silicon Thin-films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) with Low-Frequency Pulse Substrate Bias
Journal: Japanese Journal of Applied Physics, Vol. 49, p. 050202
Year: 2010
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Authors: Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi
Title: Analysis of Subthreshold Photo-Leakage Current in ZnO Thin-Film Transistors using Indium-Ion Implantation
Journal: Solid State Electronics, Vol. 54, p. 1392
Year: 2010
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Authors: FURUTA Mamoru, LI Chaoyang, HIRAO Takashi
Title: Uniformity and Stability in Zinc Oxide Thin-Film Transistors (ZnO TFTs)
Journal: Journal of Society for Information Display, Vol. 18/10, p. 773
Year: 2010
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Authors: M. Kimura, Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi
Title: Mechanism Analysis of Photoleakage Current in ZnO Thin-Film Transistors using Device Simulation
Journal: Applied Physics Letters, Vol. 97, p. 163503
Year: 2010
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Authors: Chaoyang Li, Tokiyoshi Matsuda, Toshiyuki Kawaharamura, Hiroshi Furuta, Mamoru Furuta, Takahiro Hiramatsu, Takashi Hirao, Yoichiro Nakanishi, Keiji Ichi
Title: Comparison of structural and photoluminescence properties of ZnO nano-structures influenced by gas ratio and substrate bias during radio frequency sputtering
Journal: J. Vac. Sci. Technol. B, Vol. 28, No. 2, pp. C2B51-55
Year: 2010
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Authors: FURUTA Mamoru, T. Nakanishi, M. Kimura, T. Hiramatsu, T. Matsuda, KAWAHARAMURA Toshiyuki, FURUTA Hiroshi, HIRAO Takashi
Title: Effect of Surface Treatment of Gate-insulator on Uniformity in Bottom-gate ZnO Thin-film Transistors
Journal: Electrochemical and Solid-State Letters, Vol. 13, pp. H101-H104
Year: 2010
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Authors: Chaoyang Li, Mamoru Furuta, Tokiyoshi Matsuda, Takahiro Hiramatsu, Hiroshi Furuta, Takashi Hirao
Title: Effects of substrate on the structural, electrical and optical properties of Al-doped ZnO films prepared by RF magnetron sputtering
Journal: Thin Solid Films, Vol. 517, pp. 3265-3268
Year: 2009
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Authors: FURUTA Mamoru, T. Hiramatsu, T. Matsuda, LI Chaoyang, FURUTA Hiroshi, HIRAO Takashi
Title: Thermal Stability and Sheet Resistance of Undoped ZnO Films Deposited on Insulators
Journal: Electrochemical and Solid-State Letters, Vol. 12, pp. K74-K76
Year: 2009
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Authors: S. Aihara, H. Seo, M. Namba, H. Ohtake, M. Kubota, N. Egami, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi
Title: Stacked Image Sensor with Green- and Red-Sensitive Organic Photoconductive Films Applying Zinc-Oxide Thin Film Transistors to a Signal Readout Circuit
Journal: IEEE Trans. on Electron Devices, Vol. 56, No. 11, pp. 2570-2576
Year: 2009
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Authors: T. Hiramatsu, FURUTA Mamoru, FURUTA Hiroshi, T. Matsuda, LI Chaoyang, HIRAO Takashi
Title: Effect of Substrate Bias on Crystal Structure and Thermal Stability of Sputter-Deposited ZnO Films
Journal: Journal of Crystal Growth, Vol. 311, pp. 282-285
Year: 2009
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Authors: Chaoyang Li, Toshiyuki Kawaharamura, Tokiyoshi Matsuda, Hiroshi Furuta, Takahiro Hiramatsu, FURUTA Mamoru, Takashi Hirao
Title: Intense green cathodoluminescence from low-temperature-deposited ZnO film with fluted hexagonal cone nanostructures
Journal: Appl. Phys. Express, Vol. 2, pp. 091601-091603
Year: 2009
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Authors: FURUTA Mamoru, T. Hiramatsu, T. Matsuda, LI Chaoyang, FURUTA Hiroshi, HIRAO Takashi
Title: Oxygen Bombardment Effects on Average Crystallite Size of Sputter-Deposited ZnO Films
Journal: Journal of Non-Crystalline Solids, Vol. 354, pp. 1926-1931
Year: 2008
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Authors: T. Matsuda, FURUTA Mamoru, T. Hiramatsu, LI Chaoyang, FURUTA Hiroshi, HIRAO Takashi
Title: Influence of Amorphous Buffer Layers on the Crystallinity of Sputter-Deposited Undoped ZnO Films
Journal: Journal of Crystal Growth, Vol. 315, pp. 31-35
Year: 2008
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Authors: FURUTA Mamoru, HIRAO Takashi, T. Hiramatsu, T. Matsuda, LI Chaoyang, FURUTA Hiroshi, H. Hokari, M. Yoshida, H. Ishii, M. Kakegawa
Title: Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs
Journal: IEEE Trans. on Electron Devices, Vol. 55, No. 11, pp. 3136-3142
Year: 2008
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Authors: FURUTA Mamoru, T. Hiramatsu, T. Matsuda, FURUTA Hiroshi, HIRAO Takashi
Title: Effects of Energetic Particle Bombardment on the Microstructure of Zinc Oxide (ZnO) Films Deposited by rf Magnetron Sputtering
Journal: Japanese Journal of Applied Physics, Vol. 46, pp. 4038-4041
Year: 2007
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Authors: T. Hirao, M. Furuta, H. Furuta, T.Matsuda, T. Hiramatsu, H. Hokari, M. Yoshida, M.Ishii, M.Kakegawa
Title: Novel top-gate zinc oxide thin-film transistors (ZnO TFTs) for AMLCDs
Journal: J.of the SID, Vol. 15, pp. 17-22
Year: 2007
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Authors: H. Furuta, M. Furuta, T.Matsuda, T.Hiramatsu, T. Hirao
Title: SiO2 Insulator Film Synthesized at 100℃ using Tetramethylsilane by Inductively Coupled Plasma-Chemical Vapor Deposition
Journal: Japanese Journal of Applied Physics, Vol. 46, No. 10, pp. L237-L240, The Japan Society of Applied Physics
Year: 2007
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Authors: Chaoyang Li, Mamoru Furuta, Tokiyoshi Matsuda, Takahiro Hiramatsu, Hiroshi Furuta, Takashi Hirao
Title: RF power and thermal annealing effect on the properties of zinc oxide films prepared by radio frequency magnetron sputtering
Journal: Research Letter in Materials Science, Vol. 1155, pp. 26459-26463
Year: 2007
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Authors: T. Hiramatsu, FURUTA Mamoru, FURUTA Hiroshi, T. Matsuda, HIRAO Takashi
Title: Influence of Thermal Annealing on Microstructure of Zinc Oxide Films Deposited by RF Magnetron Sputtering
Journal: Japanese Journal of Applied Physics, Vol. 46, pp. 3319-3323
Year: 2007
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Authors: T. Matsuda, FURUTA Mamoru, T. Hiramatsu, FURUTA Hiroshi, HIRAO Takashi
Title: Sheet Resistance and Crystallinity of Ga- and Al- Implanted Zinc Oxide Thin Films with Post Annealing
Journal: Journal of Vacuum Science and Technology A, Vol. 25, pp. 706-710
Year: 2007
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Authors: T. Komukai, K. Aoki, H. Furuta, M. Furuta, K. Oura, HIRAO Takashi
Title: Structural Analysis of High-Density Vertically Aligned Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition with Fe/Al Multilayer Catalyst
Journal: Japanese Journal of Applied Physics, Vol. 45, No. 11, pp. 8988-8990, The Japan Society of Applied Physics
Year: 2006
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Authors: K. Aoki, T. Yamamoto, H. Furuta, T. Ikuno, S. Honda, M. Furuta, K. Oura, T. Hirao
Title: Low-Temperature Growth of Carbon Nano-Fiber by Thermal Chemical Vapor Deposition using CuNi Catalyst
Journal: Japanese Journal of Applied Physics, Vol. 45, No. 5329, pp. 5329-5331, The Japan Society of Applied Physics
Year: 2006
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Authors: T. Komukai, K. Aoki, FURUTA Hiroshi, FURUTA Mamoru, K. Oura, HIRAO Takashi
Title: Density Control of Carbon Nanotubes Through The Thickness of Fe/Al Multilayer Catalyst
Journal: Japanese Journal of Applied Physics, Vol. 45, pp. 6043-6045
Year: 2006
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Authors: FURUTA Mamoru, Y. Uraoka, T. Fuyuki
Title: Reliability of Low-temperature Poly-Si TFTs with LDD Structures
Journal: Japanese Journal of Applied Physics, Vol. 42, pp. 4257-4260
Year: 2003
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Authors: FURUTA Mamoru, H. Satani, T. Terashita, T. Tamura, Y. Tsuchihashi
Title: Hydrogen Implantation Damage in Polycrystalline Silicon Thin Film Transistors Caused by Ion Doping
Journal: Japanese Journal of Applied Physics, Vol. 41, pp. 1259-1264
Year: 2002
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Authors: Y. Miyata, FURUTA Mamoru, T. Yoshioka, T. Kawamura
Title: Polycrystalline Silicon Recrystallized with Excimer Laser Irradiation and Impurity Doping using Ion Doping Method
Journal: Journal of Applied Physics, Vol. 73, pp. 3271-3275
Year: 1993
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Authors: FURUTA Mamoru, T. Kawamura, T. Yoshioka, Y. Miyata
Title: Bottom-Gate Poly-Si Thin Film Transistors using XeCl Excimer Laser Annealing and Ion Doping
Journal: IEEE Transaction on Electron Devices, Vol. 40, pp. 1964-1969
Year: 1993
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Authors: Y. Miyata, FURUTA Mamoru, T. Yoshioka, T. Kawamura
Title: Low-Temperature Polycrystalline Silicon Thin-Film Transistors for Large-Area Liquid Crystal Display
Journal: Japanese Journal of Applied Physics, Vol. 31, pp. 4559-4562
Year: 1992
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Authors: K. Okamoto, FURUTA Mamoru, K. Yamaguchi
Title: Lateral Growth on (110) GaAs Substrates by Metalorganic Chemical Vapor Deposition
Journal: Japanese Journal of Applied Physics, Vol. 27, pp. L437-L440
Year: 1988
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Authors: K. Okamoto, FURUTA Mamoru, K. Yamaguchi
Title: Zn and Si Doping in {110} GaAs Epilayers Grown by Metalorganic Chemical Vapor Deposition
Journal: Japanese Journal of Applied Physics, Vol. 27, pp. L2121-L2124
Year: 1988
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