Faculty Members

LANGUAGE ≫ Japanese
furuta-mamoru-1.jpg

Professor
FURUTA, Mamoru

Areas of specialization
Laboratory/research office Advanced materials and device science laboratory
Advanced devices and materials enable us to improve quality of life and environmental loading. In addition, device science is an essential to enhance material functionality. In this laboratory, wide variety of researches have been carried out from material to device science based semiconductor as core materials. Our aim is to improve the quality of life through advanced functional devices for information technology.
Current research topics
Educational background 2003: Doctor
1988: Master
Professional background 2012-: 
2011-: 
2005-2010: 
2003-2005: 
1996-2003: 
1988-1996: 
Licenses
Academic societies

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Courses

* Courses provided in English are shown with (E) mark

Undergraduate school
  • Electrical and Physical Properties of Functional Materials
  • Functional Electric Devices Engineering
  • Introduction to Materials Science and Engineering
  • Physics and Material Experiment
  • Graduation Thesis
Graduate school
  • Individual Work for Graduate
  • Seminar 1
  • Seminar 2
  • Seminar 3
  • Seminar 4
  • Advanced Seminar 1
  • Advanced Seminar 2
  • Advanced Materials Engineering 2
  • Applied Science and Engineering of Materials 1
  • Applied Science and Engineering of Materials 2
  • Applied Science and Engineering of Materials 3
  • Applied Science and Engineering of Materials 4
  • Applied Material Properties 1
  • Applied Material Properties 3

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Research activities

Research papers
  1. Authors: Shuya Kono, Yusaku Magari, Marin Mori, S G Mehadi Aman, Norbert Fruehauf, Hiroshi Furuta, Mamoru Furuta
    Title: Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices
    Journal: Japanese Journal of Applied Physics, Vol. 60, pp. SBBM05-1-SBBM05-6
    Year: 2021
  2. Authors: Yusaku Magari, Mamoru Furuta
    Title: Effects of water and hydrogen introduction during In–Ga–Zn–O sputtering on the performance of low-temperature processed thin-film transistors
    Journal: Japanese Journal of Applied Physics, Vol. 60, pp. SBBM04-1-SBBM04-5
    Year: 2021
  3. Authors: Yusaku Magari, S G Mehadi Aman, Daichi Sasaki, Kentaro Masuda, Kenta Shimpo, Hisao Makino, Mutsumi Kimura, Mamoru Furuta
    Title: Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes
    Journal: ACS Applied Materials and Interfaces, Vol. 12, pp. 47739-47746
    Year: 2020
  4. Authors: Daichi Koretomo, Shuhei Hamada, Marin Mori, Yusaku Magari, Mamoru Furuta
    Title: Marked improvement in reliability of 150 °C-processed In–Ga–Zn–O (IGZO) thin-film transistors by applying hydrogenated IGZO as a channel material
    Journal: Applied Physics Express, Vol. 13, pp. 076501-1-076501-4
    Year: 2020
  5. Authors: Daichi Sasaki, Shuhei Hamada, Yusaku Magari, Mamoru Furuta
    Title: Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors
    Journal: Materials, Vol. 13, pp. 1935-1-1935-12
    Year: 2020
  6. Authors: Dapeng Wang, Mamoru Furuta, Shigekazu Tomai, Koki Yano
    Title: Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses
    Journal: Nanomaterials, Vol. 10, No. 4, pp. 617-1-617-10
    Year: 2020
  7. Authors: Yusaku Magari, S G Mehadi Aman, Daichi Sasaki, Kentaro Masuda, Kenta Shimpo, Mamoru Furuta
    Title: Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel
    Journal: Japanese Journal of Applied Physics, Vol. 59, pp. SGGJ04-1-SGGJ04-5
    Year: 2020
  8. Authors: Hyo-Eun Kim, Mamoru Furuta, Sung-Min Yoon
    Title: A Facile Doping Process of the Organic Inter-Layer Dielectric for Self-Aligned Coplanar In-Ga-Zn-O Thin-Film Transistors
    Journal: IEEE Electron Device Letters, Vol. 41, No. 3, pp. 393-396
    Year: 2020
  9. Authors: Dapeng Wang, Dan Li, Wenjing Zhao, Mamoru Furuta
    Title: Defect gradient control in amorphous InGaZnO for high-performance thin-film transistors
    Journal: Journal of Phisics D:Applied Physics, Vol. 53, pp. 1351404-1-1351404-7
    Year: 2020
  10. Authors: Ayata Kurasaki, Ryo Tanaka, Sumio Sugisaki, Tokiyoshi Matsuda, Daichi Sasaki, Yusaku Magari, Mamoru Furuta, Mutsumi Kimura
    Title: Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density
    Journal: Materials, Vol. 12, pp. 3236-1-3236-8, MDPI
    Year: 2019
  11. Authors: Dang Thai Giang, Martin Allen, Mamoru Furuta, Toshiyuki Kawaharamura
    Title: Electronic devices fabricated on mist-CVD-grown oxide semiconductors and their applications
    Journal: Japanese Journal of Applied Physics, Vol. 58, p. 090606
    Year: 2019
  12. Authors: Dapeng Wang, Mamoru Furuta
    Title: Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors
    Journal: Beilstein Journal of Nanotechnology, Vol. 10, pp. 1125-1130
    Year: 2019
  13. Authors: Mamoru Furuta, Daichi Koretomo, Yusaku Magari, S G Mehadi Aman, Ryunosuke Higashi, Shuhei Hamada
    Title: Heterojunction channel engineering to enhance performance and reliability of amorphous In–Ga–Zn–O thin-film transistors
    Journal: Japanese Journal of Applied Physics, Vol. 58, No. 9, pp. 090604-1-090604-9
    Year: 2019
  14. Authors: Sol-Mi Kwak, Hyeong-Rae Kim, Hye-Won Jang, Ji-Hee Yang, Mamoru Furuta, Sung-Min Yoon
    Title: Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator.
    Journal: Organic Electronics, Vol. 71, pp. 7-13
    Year: 2019
  15. Authors: C. J. Koswaththage, T. Higashizako, T. Okada, T. Sadoh, Mamoru Furuta, B. S. Bae, T. Noguchi
    Title: High mobility sputtered InSb film by blue laser diode annealing
    Journal: AIP advances, Vol. 9, No. 4, pp. 045009-1-045009-5
    Year: 2019
  16. Authors: Dapeng Wang, Wenjing Zhao, Mamoru Furuta
    Title: Collaborative optimization of thermal budget annealing and active layer defect content enhancing electrical characteristics and bias stress stability in InGaZnO thin-film
    Journal: Journal of Physics D: Applied Physics, Vol. 52, pp. 235101-1-235101-6
    Year: 2019
  17. Authors: sumio sugisaki, tokiyoshi Matsuda, Mutsunori Uenuma, Toshihide Nabatame, Yasuhiko Nakashima, Takahito Imai, Yusaku Magari, Daichi Koretomo, Mamoru Furuta, Mustumi Kimura
    Title: Memristive characteristic of an amorphous Ga-Sn-O thin-film device
    Journal: Scientific reports, Vol. 9, pp. 2757-1-2757-7
    Year: 2019
  18. Authors: Daichi Koretomo, Yuta Hashimoto, Shuhei Hamada, Miki Miyanaga, Mamoru Furuta
    Title: Influence of a SiO2 passivation on electrical properties and reliability of In–W–Zn–O thin-film transistor
    Journal: Japanese Journal of Applied Physics, Vol. 58, No. 1, pp. 018003-1-018003-3, Japan Society of Applied Physics
    Year: 2018
  19. Authors: Dapeng Wang, Mamoru Furuta
    Title: Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses
    Journal: Beilstein Journal of Nanotechnology, Vol. 9, pp. 2573-2580
    Year: 2018
  20. Authors: S G Mehadi Aman, Daichi Koretomo, Yusaku Magari, Mamoru Furuta
    Title: Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In–Ga–Zn–O Thin-Film Transistors
    Journal: IEEE Transaction on Electron Devices, Vol. 65, No. 8, pp. 3257-3263, IEEE
    Year: 2018
  21. Authors: Aman S G Mehadi, Yusaku Magari, Kenta Shimpo, Yuya Hirota, Hisao Makino, Daichi Koretomo, Mamoru Furuta
    Title: Low temperature (150 ℃) activation of Ar+O2+H2 sputtered In-Ga-Zn-O thin film transistors
    Journal: Applied Physics Express, Vol. 11, No. 8, pp. 0811101-1-0811101-4
    Year: 2018
  22. Authors: Aman S G Mehadi, Mamoru Furuta
    Title: Correlation between passivation film density and reliability pf In–Ga–Zn–O thin-film transistors
    Journal: Japanese Journal of Applied Physics, Vol. 57, pp. 088001-1-088001-2
    Year: 2018
  23. Authors: Dapeng Wang, Wenjing Zhao, Hua Li, Mamoru Furuta
    Title: Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses
    Journal: Materials, Vol. 11, No. 4, pp. 559-1-559-11
    Year: 2018
  24. Authors: Mamoru Furuta, Yusaku Magari, Shinsuke Hashimoto, Kenichiro Hamada
    Title: Low-temperature Processed InGaZnO MES-FET for Flexible Device Applicatio
    Journal: ECS transaction, Vol. 79, No. 1, pp. 43-48
    Year: 2017
  25. Authors: Tokiyoshi MATSUDA, Kenta UMEDA, Yuta KATO, Daiki NISHIMOTO, Mamoru Furuta, Mustumi KIMURA
    Title: Rare-metal-free high-performance Ga-Sn-O thin film transistor
    Journal: Scientific Reports, Vol. 7, p. 44326
    Year: 2017
  26. Authors: WANG Dapeng, JIANG Jingxin, FURUTA Mamoru
    Title: Investigation of Carrier Generation Mechanism in Fluorine-Doped n+-In–Ga–Zn-O for Self-Aligned Thin-Film Transistors
    Journal: IEEE Journal of Display Technology, Vol. 12, No. 3, pp. 258-262, IEEE
    Year: 2016
  27. Authors: FURUTA Mamoru, JIANG Jingxin, MAI Phi Hung, Tatsuya Toda, WANG Dapeng, Gengo Tatsuoka
    Title: Suppression of Negative Gate Bias and Illumination Stress Degradation by Fluorine-Passivated In-Ga-Zn-O Thin-Film Transistors
    Journal: ECS Journal of Solid State Science and Technology, Vol. 5, No. 3, pp. Q88-Q91
    Year: 2016
  28. Authors: Kahori Kise, Mami Fujii, Satoshi Urakaswa, Haruka Yamazaki, Emi Kawashima, Shigekazu Tomai, Koki Yano, WANG Dapeng, FURUTA Mamoru, Yasuaki Ishikawa, Yukiharu Uraoka
    Title: Self-heating induced instability of oxide thin film transistors under dynamic stress
    Journal: Applied Physics Letters, Vol. 108, p. 023501
    Year: 2016
  29. Authors: MAI Phi Hung, WANG Dapeng, FURUTA Mamoru
    Title: Origin of the alternative current (AC-) gate bias improving the NBIS stability of IGZO TFTs
    Journal: ECS Solid State Letters, Vol. 4 , No. 12, pp. Q66-Q68, Electrochemical Society
    Year: 2015
  30. Authors: MAI Phi Hung, WANG Dapeng, FURUTA Mamoru
    Title: Investigating Effect of Postannealing Time on Positive Bias Stress Stability of In–Ga–Zn–O TFT by Conductance Method
    Journal: IEEE Transaction on Electron Devices, Vol. 62, No. 11, pp. 3697-3702
    Year: 2015
  31. Authors: G. T. Dang, KAWAHARAMURA Toshiyuki, FURUTA Mamoru, M. W. Allen
    Title: Mist-CVD Grown Sn-Doped α-Ga2O3 MESFETs
    Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 62, No. 11, pp. 3640-3644
    Year: 2015
  32. Authors: Y. Koga, T. Matsuda, M. Kimura, WANG Dapeng, FURUTA Mamoru, M. Kasami, S. Tomai, K. Yano
    Title: Capacitance Sensor of Frequency Modulation for Integrated Touchpanels Using Amorphous In-Sn-Zn-O Thin-FIlmTransistors
    Journal: IEICE Trabsaction on Electronics, Vol. E98-C, No. 11, pp. 1028-1031
    Year: 2015
  33. Authors: G. T. Dang, KAWAHARAMURA Toshiyuki, FURUTA Mamoru, S. Saxena, M. W. Allen
    Title: Stability of In-Ga-Zn-O metal-semiconductor field-effect-transistors under bias, illumination, and temperature stress
    Journal: Applied Physics Letter, Vol. 107, pp. 143504-1-143504-5
    Year: 2015
  34. Authors: FURUTA Mamoru, JIANG Jingxin, Gengo Tatsuoka, WANG Dapeng
    Title: (Invited) Doping and Defect Passivation in In-Ga-Zn-O by Fluorine
    Journal: ECS Transaction, Vol. 67, No. (1), pp. 41-49
    Year: 2015
  35. Authors: JIANG Jingxin, Tatsuya Toda, MAI Phi Hung, WANGDapeng, FURUTA Mamoru
    Title: Highly stable fluorine-passivated In–Ga–Zn–O thin-film transistors under positive gate bias and temperature stress
    Journal: Applied Physics Express, Vol. 7, pp. 114103-01-114103-4
    Year: 2014
  36. Authors: Tatuya Toda, WANGDapeng, JIANG Jingxin, MAI Phi Hung, FURUTA Mamoru
    Title: Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor
    Journal: IEEE Transactions on Electron Devices, Vol. 61, No. 11, pp. 3762-3767
    Year: 2014
  37. Authors: FURUTA Mamoru, KAWAHARAMURA Toshiyuki, Takayuki Uchida, WANGDapeng, SANADA Masaru
    Title: High-Performance Solution-Processed InGaZnO Thin-Film Transistor Fabricated by Ozone-Assisted Atmospheric Pressure Mist Deposition
    Journal: Journal of Display Technology, Vol. 10, No. 11, pp. 934-938, IEEE
    Year: 2014
  38. Authors: JIANG Jingxin, FURUTA Mamoru, WANGDapeng
    Title: Self-Aligned Bottom-Gate In-Ga-Zn-O Thin-Film Transistor With Source/Drain Regions Formed by Direct Deposition of Fluorinated Silicon Nitride
    Journal: IEEE Electron Device Letters, Vol. 35, No. 9, pp. 933-935
    Year: 2014
  39. Authors: MAI Phi Hung, WANGDapeng, Tatsuya Toda, JIANG Jingxin, FURUTA Mamoru
    Title: Quantitative Analysis of Hole-Trapping and Defect-Creation in InGaZnO Thin-Film Transistor under Negative-Bias and Illumination-Stress
    Journal: ECS Journal of Solid State Science and Technology, Vol. 3, No. 9, pp. Q3023-Q3026
    Year: 2014
  40. Authors: WANGDapeng, MAI Phi Hung, JIANG Jingxin, Tatuya Toda, FURUTA Mamoru
    Title: Suppression of Degradation Induced by Negative Gate Bias and Illumination Stress in Amorphous InGaZnO Thin-Film Transistors by Applying Negative Drain Bias
    Journal: ACS Applied Materials & Interfaces, Vol. 6, No. 8, pp. 5713-5718
    Year: 2014
  41. Authors: MAI Phi Hung, WANGDapeng, JIANG Jingxin, FURUTA Mamoru
    Title: Negative Bias and Illumination Stress Induced Electron Trapping at Back-Channel Interface of InGaZnO Thin-Film Transistor
    Journal: ECS Solid State Letters, Vol. 3, No. 3, pp. Q13-Q16
    Year: 2014
  42. Authors: WANGDapeng, MAI Phi Hung, JIANG Jingxin, Tatsuya Toda, LI Chaoyang, FURUTA Mamoru
    Title: Effect of drain bias on negative gate bias and illumination stress induced degradation in amorphous InGaZnO thin-film transistors
    Journal: Japanese Journal of Applied Physics, Vol. 53, pp. 03CC01-1-03CC01-4
    Year: 2014
  43. Authors: KAWAHARAMURA Toshiyuki, Takayuki Uchida, SANADA Masaru, FURUTA Mamoru
    Title: Growth and electrical properties of AlOx grown by mist chemical vapor deposition
    Journal: AIP Advances, Vol. 3, pp. 032135-1-032135-9
    Year: 2013
  44. Authors: Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, WANGDapeng, FURUTA Mamoru, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka
    Title: Thermal Analysis of amorphous oxide thin-film transistor degradated by combination of joule heating and hot carrier effect
    Journal: Applied Physics Letters, Vol. 102, pp. 053506-1-053506-4
    Year: 2013
  45. Authors: Tatsuya Toda, KAWAHARAMURA Toshiyuki, FRUSAWA Hiroshi, FURUTA Mamoru
    Title: Thin-Film Transistor Using Dielectrophoretic Assembly of Single-Walled Carbon Nanotubes
    Journal: ECS Transactions, Vol. 50, No. 8, pp. 223-228
    Year: 2012
  46. Authors: FURUTA Mamoru, KAWAHARAMURA Toshiyuki, Tatsuya Toda, WANGDapeng
    Title: A-InGaZnO Thin-Film Transistor with Non-Vacuum Processed InGaZnO/AlOx Gate Dielectric Stack
    Journal: ECS Transactions, Vol. 50, No. 8, pp. 95-100
    Year: 2012
  47. Authors: Shin-ichi Shimakawa, WANGDapeng, FURUTA Mamoru
    Title: Photo Induced Negative Bias Instability of Zinc Oxide Thin-Film Transistors
    Journal: Japanese Journal of Applied Physics, Vol. 51, No. 10, pp. 108003-1-108003-2
    Year: 2012
  48. Authors: FURUTA Mamoru, KAWAHARAMURA Toshiyuki, WANGDapeng, Tatsuya Toda, HIRAO Takashi
    Title: Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition
    Journal: IEEE Electron Device Letters, Vol. 33, No. 6, pp. 851-853, IEEE
    Year: 2012
  49. Authors: KAWAHARAMURA Toshiyuki, Tai Jan Dan, FURUTA Mamoru
    Title: Successful Growth of Conductive Highly Crystalline Sn-Doped a-Ga2O3 Thin Films by Fine-Channel Mist Chemical Vapor Deposition
    Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 040207-1-040207-3, Japan Society of Applied Physics 
    Year: 2012
  50. Authors: S. Shimakawa, Y. Kamada, KAWAHARAMURA Toshiyuki, WANGDapeng, LI Chaoyang, S. Fujita, HIRAO Takashi, FURUTA Mamoru
    Title: Photo-Leakage Current of Thin-Film Transistors with ZnO Channels Formed at Various Oxygen Partial Pressures under Visible Light Irradiation
    Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 03CB04-1-03CB04-4, Japan Society of Applied Physics 
    Year: 2012
  51. Authors: T. Nishida, K. Fuse, FURUTA Mamoru, Y. Ishikawa, Y. Uraoka
    Title: Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation
    Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 03CA01-1-03CA01-5, Japan Society of Applied Physics
    Year: 2012
  52. Authors: MOMOTA Sadao, Jango Hangu, Takuya Toyonaga, Hikaru Terauchi, Kazuki Maeda, Jun Taniguchi, HIRAO Takashi, FURUTA Mamoru, KAWAHARAMURA Toshiyuki
    Title: Control of swelling height of Si crystal by irradiating Ar beam
    Journal: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 1, pp. 552-556, American Scientific Publishers
    Year: 2012
  53. Authors: T. Sakai, H. Seo, S. Aihara, M. Kubota, N. Egami, WANGDapeng, FURUTA Mamoru
    Title: A 128×96 Pixel, 50 m Pixel Pitch Transparent Readout Circuit using InGaZnO4 Thin Film Transistor Array with Indium-Tin-Oxide Eletrodes for Organic Image Sensor
    Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 010202-1-010202-3
    Year: 2011
  54. Authors: M. Kimura, FURUTA Mamoru, Y. Kamada, T. Hiramatsu, T. Matsuda, FURUTA Hiroshi, LI Chaoyang, S. Fujita, HIRAO Takashi
    Title: Extraction of Trap Densities in ZnO Thin-Film Transistors and Dependence on Oxygen Partial Pressure During Sputtering of ZnO Films
    Journal: IEEE Transactions on Electron Devices, Vol. 58, No. 9, pp. 3018-3024, IEEE Electron Devices Society
    Year: 2011
  55. Authors: M. Kimura, FURUTA Mamoru, Y. Kamada, T. Hiramatsu, T. Matsuda, FURUTA Hiroshi, LI Chaoyang, S. Fujita, HIRAO Takashi
    Title: Trap Densities in ZnO Thin-Film Transistors with SiOx Gate Insulators by Several Deposition Conditions
    Journal: Electrochemical and Solid-State Letters, Vol. 14, pp. H365-H367
    Year: 2011
  56. Authors: T. Hiramatsu, FURUTA Mamoru, T. Matsuda, LI Chaoyang, HIRAO Takashi
    Title: Behavior of Oxygen in Zinc Oxide Films Through Thermal Annealing and Its Effect on Sheet Resistance
    Journal: Applied Surface Science, Vol. 257, p. 5480
    Year: 2011
  57. Authors: Y. Kamada, S. Fujita, M. Kimura, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi
    Title: Reduction of Photo-Leakage Current in ZnO Thin-Film Transistors with Dual-Gate Structure
    Journal: IEEE Electron Device Letters, Vol. 32, p. 509
    Year: 2011
  58. Authors: FURUTA Mamoru, Y. Kamada, T. Hiramatsu, LI Chaoyang, M. Kimura, S. Fujita, HIRAO Takashi
    Title: Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) with a SiOx/SiNx Stacked Gate Insulator
    Journal: Japanese Journal of Applied Physics, Vol. 50, p. 03CB09
    Year: 2011
  59. Authors: H. Seo, S. Aihara, T. Watabe, H. Ohtake, T. Sakai, M. Kubota, N. Egami, T. Hiramatsu, FURUTA Mamoru, HIRAO Takashi
    Title: A 128×96 Pixel Stacked-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin-Film Transistor Readout Circuit
    Journal: Japanese Journal of Applied Physics, Vol. 50, p. 024103
    Year: 2011
  60. Authors: Y. Kamada, S. Fujita, M. Kimura, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi
    Title: Effect of Chemical Stoichiometry of Channel Region on Bias Instability in ZnO Thin-film Transistors
    Journal: Applied Physics Letters, Vol. 98, p. 103512
    Year: 2011
  61. Authors: M. Furuta, Y. Kamada, M. Kimura, T. Hiramatsu, T. Matsuda, C. Li, H. Furuta, S. Fujita, T. Hirao
    Title: Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channel Deposited by Sputtering under Various Oxygen Partial Pressures
    Journal: IEEE Electron Device Letters, Vol. 31, pp. 1257-1259, IEEE
    Year: 2010
  62. Authors: H. Furuta, T. Kawaharamura, M. Furuta, K. Kawabata, T. Hirao, T. Komukai, K. Yoshihara, Y. Shimomoto, T. Oguchi
    Title: Crystal Structure Analysis of Multiwalled Carbon Nanotube Forests by Newly Developed Cross-Sectional XRD Measurement
    Journal: Applied Physics Express, Vol. 3, pp. 105101-1-105101-3, The Japan Society of Applied Physics
    Year: 2010
  63. Authors: T. Matsuda, M. Furuta, T. Hiramatsu, H. Furuta, C. Li, T. Hirao
    Title: Thermal stability of ZnO thin film prepared by RF-magnetron sputtering evaluated by thermal desorption spectroscopy
    Journal: Applied Surface Science, Vol. 256, No. 21, pp. 6350-6353, Elsevier
    Year: 2010
  64. Authors: H. Furuta, K. Ishii, K. Okada, M. Furuta, T. Hirao
    Title: Simulation Study of the In-plane Type Triode Carbon Nanotube Emitter
    Journal: Journal of Vacuum Science & Technology B, Vol. 28, No. 4, pp. 878-881, The AVS Science & Technology Society
    Year: 2010
  65. Authors: H. Furuta, T. Kawaharamura, K. Kawabata, M. Furuta, T. Matsuda, C. Li, T. Hirao
    Title: High-Density Short-Height Directly Grown CNT Patterned Emitter on Glass
    Journal: e-Journal of Surface Science and Nanotechnology, Vol. 8, pp. 336-339, The Surface Science Society of Japan
    Year: 2010
  66. Authors: T. Hiramatsu, T. Matsuda, H. Furuta, H. Nitta, T. Kawaharamura, C. Li, M. Furuta, T. Hirao
    Title: Effect of Pulsed Substrate Bias on Film Properties of SiO2 Deposited by Inductively Coupled Plasma Deposition
    Journal: Japanese Journal Applied Physics, Vol. 49, pp. 03CA03-1-03CA03-4
    Year: 2010
  67. Authors: M. Furuta, K. Shimamura, H. Tsubokawa, K. Tokushige, H. Furuta, T. Hirao
    Title: Activation Behavior of Boron Implanted Poly-Si on Glass Substrate
    Journal: Thin Solid Films, Vol. 518, pp. 4477-4481, Elsevier
    Year: 2010
  68. Authors: M. Kimura, Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi
    Title: Mechanism Analysis of Photoleakage Current in ZnO Thin-Film Transistors using Device Simulation
    Journal: Applied Physics Letters, Vol. 97, p. 163503
    Year: 2010
  69. Authors: FURUTA Mamoru, T. Nakanishi, M. Kimura, T. Hiramatsu, T. Matsuda, KAWAHARAMURA Toshiyuki, FURUTA Hiroshi, HIRAO Takashi
    Title: Effect of Surface Treatment of Gate-insulator on Uniformity in Bottom-gate ZnO Thin-film Transistors
    Journal: Electrochemical and Solid-State Letters, Vol. 13, pp. H101-H104
    Year: 2010
  70. Authors: Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, H. Nitta, FURUTA Mamoru, HIRAO Takashi
    Title: Photo Leakage Current of ZnO TFTs in the Visible Light
    Journal: Japanese Journal of Applied Physics, Vol. 49, p. 03CB03
    Year: 2010
  71. Authors: Chaoyang Li, Tokiyoshi Matsuda, Toshiyuki Kawaharamura, Hiroshi Furuta, Mamoru Furuta, Takahiro Hiramatsu, Takashi Hirao, Yoichiro Nakanishi, Keiji Ichi
    Title: Comparison of structural and photoluminescence properties of ZnO nano-structures influenced by gas ratio and substrate bias during radio frequency sputtering
    Journal: J. Vac. Sci. Technol. B, Vol. 28, No. 2, pp. C2B51-55
    Year: 2010
  72. Authors: FURUTA Mamoru, LI Chaoyang, HIRAO Takashi
    Title: Uniformity and Stability in Zinc Oxide Thin-Film Transistors (ZnO TFTs)
    Journal: Journal of Society for Information Display, Vol. 18/10, p. 773
    Year: 2010
  73. Authors: Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi
    Title: Analysis of Subthreshold Photo-Leakage Current in ZnO Thin-Film Transistors using Indium-Ion Implantation
    Journal: Solid State Electronics, Vol. 54, p. 1392
    Year: 2010
  74. Authors: T. Matsuda, FURUTA Mamoru, T. Hiramatsu, FURUTA Hiroshi, HIRAO Takashi
    Title: Crystallinity and Resistivity of ZnO Thin Films with Indium Implantation and Post Annealing
    Journal: Journal of Vacuum Science and Technology A, Vol. 28, p. 135
    Year: 2010
  75. Authors: FURUTA Mamoru, T. Hiramatsu, HIRAO Takashi
    Title: Enhanced Nucleation of Microcrystalline Silicon Thin-films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) with Low-Frequency Pulse Substrate Bias
    Journal: Japanese Journal of Applied Physics, Vol. 49, p. 050202
    Year: 2010
  76. Authors: FURUTA Mamoru, T. Hiramatsu, T. Matsuda, LI Chaoyang, FURUTA Hiroshi, HIRAO Takashi
    Title: Thermal Stability and Sheet Resistance of Undoped ZnO Films Deposited on Insulators
    Journal: Electrochemical and Solid-State Letters, Vol. 12, pp. K74-K76
    Year: 2009
  77. Authors: T. Hiramatsu, FURUTA Mamoru, FURUTA Hiroshi, T. Matsuda, LI Chaoyang, HIRAO Takashi
    Title: Effect of Substrate Bias on Crystal Structure and Thermal Stability of Sputter-Deposited ZnO Films
    Journal: Journal of Crystal Growth, Vol. 311, pp. 282-285
    Year: 2009
  78. Authors: S. Aihara, H. Seo, M. Namba, H. Ohtake, M. Kubota, N. Egami, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi
    Title: Stacked Image Sensor with Green- and Red-Sensitive Organic Photoconductive Films Applying Zinc-Oxide Thin Film Transistors to a Signal Readout Circuit
    Journal: IEEE Trans. on Electron Devices, Vol. 56, No. 11, pp. 2570-2576
    Year: 2009
  79. Authors: Chaoyang Li, Toshiyuki Kawaharamura, Tokiyoshi Matsuda, Hiroshi Furuta, Takahiro Hiramatsu, FURUTA Mamoru, Takashi Hirao
    Title: Intense green cathodoluminescence from low-temperature-deposited ZnO film with fluted hexagonal cone nanostructures
    Journal: Appl. Phys. Express, Vol. 2, pp. 091601-091603
    Year: 2009
  80. Authors: Chaoyang Li, Mamoru Furuta, Tokiyoshi Matsuda, Takahiro Hiramatsu, Hiroshi Furuta, Takashi Hirao
    Title: Effects of substrate on the structural, electrical and optical properties of Al-doped ZnO films prepared by RF magnetron sputtering
    Journal: Thin Solid Films, Vol. 517, pp. 3265-3268
    Year: 2009
  81. Authors: FURUTA Mamoru, T. Hiramatsu, T. Matsuda, LI Chaoyang, FURUTA Hiroshi, HIRAO Takashi
    Title: Oxygen Bombardment Effects on Average Crystallite Size of Sputter-Deposited ZnO Films
    Journal: Journal of Non-Crystalline Solids, Vol. 354, pp. 1926-1931
    Year: 2008
  82. Authors: FURUTA Mamoru, HIRAO Takashi, T. Hiramatsu, T. Matsuda, LI Chaoyang, FURUTA Hiroshi, H. Hokari, M. Yoshida, H. Ishii, M. Kakegawa
    Title: Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs
    Journal: IEEE Trans. on Electron Devices, Vol. 55, No. 11, pp. 3136-3142
    Year: 2008
  83. Authors: T. Matsuda, FURUTA Mamoru, T. Hiramatsu, LI Chaoyang, FURUTA Hiroshi, HIRAO Takashi
    Title: Influence of Amorphous Buffer Layers on the Crystallinity of Sputter-Deposited Undoped ZnO Films
    Journal: Journal of Crystal Growth, Vol. 315, pp. 31-35
    Year: 2008
  84. Authors: H. Furuta, M. Furuta, T.Matsuda, T.Hiramatsu, T. Hirao
    Title: SiO2 Insulator Film Synthesized at 100℃ using Tetramethylsilane by Inductively Coupled Plasma-Chemical Vapor Deposition
    Journal: Japanese Journal of Applied Physics, Vol. 46, No. 10, pp. L237-L240, The Japan Society of Applied Physics
    Year: 2007
  85. Authors: T. Hirao, M. Furuta, H. Furuta, T.Matsuda, T. Hiramatsu, H. Hokari, M. Yoshida, M.Ishii, M.Kakegawa
    Title: Novel top-gate zinc oxide thin-film transistors (ZnO TFTs) for AMLCDs
    Journal: J.of the SID, Vol. 15, pp. 17-22
    Year: 2007
  86. Authors: FURUTA Mamoru, T. Hiramatsu, T. Matsuda, FURUTA Hiroshi, HIRAO Takashi
    Title: Effects of Energetic Particle Bombardment on the Microstructure of Zinc Oxide (ZnO) Films Deposited by rf Magnetron Sputtering
    Journal: Japanese Journal of Applied Physics, Vol. 46, pp. 4038-4041
    Year: 2007
  87. Authors: T. Hiramatsu, FURUTA Mamoru, FURUTA Hiroshi, T. Matsuda, HIRAO Takashi
    Title: Influence of Thermal Annealing on Microstructure of Zinc Oxide Films Deposited by RF Magnetron Sputtering
    Journal: Japanese Journal of Applied Physics, Vol. 46, pp. 3319-3323
    Year: 2007
  88. Authors: T. Matsuda, FURUTA Mamoru, T. Hiramatsu, FURUTA Hiroshi, HIRAO Takashi
    Title: Sheet Resistance and Crystallinity of Ga- and Al- Implanted Zinc Oxide Thin Films with Post Annealing
    Journal: Journal of Vacuum Science and Technology A, Vol. 25, pp. 706-710
    Year: 2007
  89. Authors: Chaoyang Li, Mamoru Furuta, Tokiyoshi Matsuda, Takahiro Hiramatsu, Hiroshi Furuta, Takashi Hirao
    Title: RF power and thermal annealing effect on the properties of zinc oxide films prepared by radio frequency magnetron sputtering
    Journal: Research Letter in Materials Science, Vol. 1155, pp. 26459-26463
    Year: 2007
  90. Authors: T. Komukai, K. Aoki, H. Furuta, M. Furuta, K. Oura, HIRAO Takashi
    Title: Structural Analysis of High-Density Vertically Aligned Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition with Fe/Al Multilayer Catalyst
    Journal: Japanese Journal of Applied Physics, Vol. 45, No. 11, pp. 8988-8990, The Japan Society of Applied Physics
    Year: 2006
  91. Authors: K. Aoki, T. Yamamoto, H. Furuta, T. Ikuno, S. Honda, M. Furuta, K. Oura, T. Hirao
    Title: Low-Temperature Growth of Carbon Nano-Fiber by Thermal Chemical Vapor Deposition using CuNi Catalyst
    Journal: Japanese Journal of Applied Physics, Vol. 45, No. 5329, pp. 5329-5331, The Japan Society of Applied Physics
    Year: 2006
  92. Authors: T. Komukai, K. Aoki, FURUTA Hiroshi, FURUTA Mamoru, K. Oura, HIRAO Takashi
    Title: Density Control of Carbon Nanotubes Through The Thickness of Fe/Al Multilayer Catalyst
    Journal: Japanese Journal of Applied Physics, Vol. 45, pp. 6043-6045
    Year: 2006
  93. Authors: FURUTA Mamoru, Y. Uraoka, T. Fuyuki
    Title: Reliability of Low-temperature Poly-Si TFTs with LDD Structures
    Journal: Japanese Journal of Applied Physics, Vol. 42, pp. 4257-4260
    Year: 2003
  94. Authors: FURUTA Mamoru, H. Satani, T. Terashita, T. Tamura, Y. Tsuchihashi
    Title: Hydrogen Implantation Damage in Polycrystalline Silicon Thin Film Transistors Caused by Ion Doping
    Journal: Japanese Journal of Applied Physics, Vol. 41, pp. 1259-1264
    Year: 2002
  95. Authors: FURUTA Mamoru, T. Kawamura, T. Yoshioka, Y. Miyata
    Title: Bottom-Gate Poly-Si Thin Film Transistors using XeCl Excimer Laser Annealing and Ion Doping
    Journal: IEEE Transaction on Electron Devices, Vol. 40, pp. 1964-1969
    Year: 1993
  96. Authors: Y. Miyata, FURUTA Mamoru, T. Yoshioka, T. Kawamura
    Title: Polycrystalline Silicon Recrystallized with Excimer Laser Irradiation and Impurity Doping using Ion Doping Method
    Journal: Journal of Applied Physics, Vol. 73, pp. 3271-3275
    Year: 1993
  97. Authors: Y. Miyata, FURUTA Mamoru, T. Yoshioka, T. Kawamura
    Title: Low-Temperature Polycrystalline Silicon Thin-Film Transistors for Large-Area Liquid Crystal Display
    Journal: Japanese Journal of Applied Physics, Vol. 31, pp. 4559-4562
    Year: 1992
  98. Authors: K. Okamoto, FURUTA Mamoru, K. Yamaguchi
    Title: Lateral Growth on (110) GaAs Substrates by Metalorganic Chemical Vapor Deposition
    Journal: Japanese Journal of Applied Physics, Vol. 27, pp. L437-L440
    Year: 1988
  99. Authors: K. Okamoto, FURUTA Mamoru, K. Yamaguchi
    Title: Zn and Si Doping in {110} GaAs Epilayers Grown by Metalorganic Chemical Vapor Deposition
    Journal: Japanese Journal of Applied Physics, Vol. 27, pp. L2121-L2124
    Year: 1988
Invited lectures
  1. Heterojunction Channel Engineering for Oxide Thin-Film Transistors, Hybrid, 2020/11/03
  2. Heterojunction Channel Engineering for in-Ga-Zn-O Thin-Film Transistors, Online, 2020/10/06
  3. TFTs for Active Matrix: from Silicon to Oxides and New materials, 3rd International Conference on Consumer Electronics and Device (ICCED 2019), Nanjing, Chian, 2019/06/14
  4. Carrier transport and bias stress stability of IGZO TFT with heterojunction channel , 7th International Conference on Semiconductor Technology for ULSI and TFTs, Kyoto, Japan, 2019/05/20
  5. , 2019/03/10
  6. Low-temperature Processed InGaZnOx TFT with an Organic Gate Insulator, 5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2018), Jeju, Korea, 2018/11/14
  7. , 2018/10/26
  8. Low-temperature activation of Ar+O2+H2 sputtered InGaZnOx film followed by thermal annealing, 4th E-MRS & MRS-J Bilateral Symposium 2018 (7th International Symposium on Transparent on Conductive Materials (TCM2018)), Crete, Greece, 2018/10/17
  9. Low-temperature activation method for InGaZnOx thin-film transistors, ECS and SMEQ Joint International Meeting, Cancun, Mexico, 2018/10/03
  10. , 2018/09/20
  11. , 2018/04/07
Awards
  1. APEX/JJAP Editorial Contribution Award, Japan Society of Applied Physics, 2017
Grants-in-Aid for Scientific Research from the Japanese government
  1. Project title: Zinc oxide transparent transistor and its application to stacked image sensor
    Category: Grant-in-Aid for Scientific Research (C)
    Project number: 23560408
    Project period: 2011-2013
    Total budget amount: 5,330,000 yen
    Keywords: 

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Social activities

Committee roles
  1. Program Sub-Committee of IMID 2019, 2019-2020
  2. Materials, Guest Editor Special Issue "Silicon and Metal Oxide Thin Film Transistors: Materials, Process Technology, Device Physics, and Reliability", 2019-2021
  3. Editor of APEX/JJAP, Japan Society of Applied Physics, 2018-2019

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