Faculty Members

Professor
FURUTA, Mamoru

Year of birth: 1964
Gender: Male
Job titles:

- Director, Research Institute
- Head, Center for Nanotechnology
- Leader, Research Unit for Advanced Functional Materials and Devices
Affiliation:

- Research Institute
- School of Engineering Science
- School of Environmental Science and Engineering
- Materials Science and Engineering, Department of Engineering, Graduate School of Enginering
- Research Unit for Advanced Functional Materials and Devices, Center for Nanotechnology, Research Institute
researchmap： https://researchmap.jp/M_Furuta0208418
Article from the "Cutting-edge Research and Social Contribution"：
https://www.kochi-tech.ac.jp/english/power/research/flexible_transparent_electronics_realized_with_oxide_semiconductors.html

Areas of specialization
Laboratory/research office	Advanced materials and device science laboratory Advanced devices and materials enable us to improve quality of life and environmental loading. In addition, device science is an essential to enhance material functionality. In this laboratory, wide variety of researches have been carried out from material to device science based semiconductor as core materials. Our aim is to improve the quality of life through advanced functional devices for information technology.
Current research topics
Educational background
Professional background
Licenses
Academic societies

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Courses

* Courses provided in English are shown with (E) mark

Undergraduate school	Electrical and Physical Properties of Functional Materials Functional Electric Devices Engineering Introduction to Materials Science and Engineering Physics and Material Experiment Graduation Thesis Condensed Matter Physics
Graduate school	Individual Work for Graduate Seminar 1 Seminar 2 Seminar 3 Seminar 4 Advanced Seminar 1 Advanced Seminar 2 Applied Material Properties 1 Applied Material Properties 2 Physics of Electric Materials and Devices

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Research activities

Research papers	Authors: Yuzhu Pan, Xin Wang, Yuhan Liao, Yubing Xu, Yuwei Li, Qing Li, Xiaobing Zhang, Jing Chen, Zhuoya Zhu, Zhiwei Zhao, Elias Emeka Elemike, Mamoru Furuta, Wei Lei Title: Epitaxial Perovskite Single-Crystalline Heterojunctions for Filter-Free Ultra-Narrowband Detection with Tunable Spectral Responses Journal: ACS Applied Materials & Interfaces, Vol. 14(44), pp. 50331-50342 Year: 2022 Authors: Y. Magari, W. Yeh, T. Ina, Mamoru Furuta Title: Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In2O3 (In2O3:H) Journal: Nanomaterials, Vol. 12(17), pp. 2958-1-2958-10 Year: 2022 Authors: Yusaku Magari, Taiki Kataoka, Wenchang Yeh, Mamoru Furuta Title: High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors Journal: Nature communications, Vol. 13, pp. 1078-1-1078-8 Year: 2022 Authors: Velichko Rostislav, Yusaku Magari, Mamoru Furuta Title: Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications Journal: Materials, Vol. 15, No. 1, pp. 334-1-334-12, MDPI Year: 2022 Authors: Taiki Kataoka, Yusaku Magari, Hisao Makino, Mamoru Furuta Title: Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors Journal: Materials, Vol. 15, No. 1, pp. 187-1-187-11, MDPI Year: 2021 Authors: Hyo-Eun Kim, Hye-Won Jang, Mamoru Furuta, Jeonghan Yoon, Saeroonter Oh, Sung-Min Yoon Title: Impact of organic inter-layer dielectric for improvement in mechanicalflexibility of self-aligned coplanar in-Ga-Zn-O thin-film transistor Journal: Organic Electronics, Vol. 96, pp. 106223-1-106223-7 Year: 2021 Authors: Velichko Rostislav, MAGARI Yusaku, Hisao Makino, Mamoru Furuta Title: Investigation of the effect of adding a moderate amount of hydrogen on the properties of tin oxide films deposited by DC magnetron sputtering Journal: Japanese Journal of Applied Physics, Vol. 60, pp. 055503-1-055503-6 Year: 2021 Authors: Shuya Kono, Yusaku Magari, Marin Mori, S G Mehadi Aman, Norbert Fruehauf, Hiroshi Furuta, Mamoru Furuta Title: Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices Journal: Japanese Journal of Applied Physics, Vol. 60, pp. SBBM05-1-SBBM05-6 Year: 2021 Authors: Yusaku Magari, Mamoru Furuta Title: Effects of water and hydrogen introduction during In–Ga–Zn–O sputtering on the performance of low-temperature processed thin-film transistors Journal: Japanese Journal of Applied Physics, Vol. 60, pp. SBBM04-1-SBBM04-5 Year: 2021 Authors: Yusaku Magari, S G Mehadi Aman, Daichi Sasaki, Kentaro Masuda, Kenta Shimpo, Hisao Makino, Mutsumi Kimura, Mamoru Furuta Title: Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes Journal: ACS Applied Materials and Interfaces, Vol. 12, pp. 47739-47746 Year: 2020 Authors: Daichi Koretomo, Shuhei Hamada, Marin Mori, Yusaku Magari, Mamoru Furuta Title: Marked improvement in reliability of 150 °C-processed In–Ga–Zn–O (IGZO) thin-film transistors by applying hydrogenated IGZO as a channel material Journal: Applied Physics Express, Vol. 13, pp. 076501-1-076501-4 Year: 2020 Authors: Daichi Sasaki, Shuhei Hamada, Yusaku Magari, Mamoru Furuta Title: Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors Journal: Materials, Vol. 13, pp. 1935-1-1935-12 Year: 2020 Authors: Dapeng Wang, Mamoru Furuta, Shigekazu Tomai, Koki Yano Title: Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses Journal: Nanomaterials, Vol. 10, No. 4, pp. 617-1-617-10 Year: 2020 Authors: Yusaku Magari, S G Mehadi Aman, Daichi Sasaki, Kentaro Masuda, Kenta Shimpo, Mamoru Furuta Title: Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel Journal: Japanese Journal of Applied Physics, Vol. 59, pp. SGGJ04-1-SGGJ04-5 Year: 2020 Authors: Hyo-Eun Kim, Mamoru Furuta, Sung-Min Yoon Title: A Facile Doping Process of the Organic Inter-Layer Dielectric for Self-Aligned Coplanar In-Ga-Zn-O Thin-Film Transistors Journal: IEEE Electron Device Letters, Vol. 41, No. 3, pp. 393-396 Year: 2020 Authors: Dapeng Wang, Dan Li, Wenjing Zhao, Mamoru Furuta Title: Defect gradient control in amorphous InGaZnO for high-performance thin-film transistors Journal: Journal of Phisics D:Applied Physics, Vol. 53, pp. 1351404-1-1351404-7 Year: 2020 Authors: Ayata Kurasaki, Ryo Tanaka, Sumio Sugisaki, Tokiyoshi Matsuda, Daichi Sasaki, Yusaku Magari, Mamoru Furuta, Mutsumi Kimura Title: Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density Journal: Materials, Vol. 12, pp. 3236-1-3236-8, MDPI Year: 2019 Authors: Dang Thai Giang, Martin Allen, Mamoru Furuta, Toshiyuki Kawaharamura Title: Electronic devices fabricated on mist-CVD-grown oxide semiconductors and their applications Journal: Japanese Journal of Applied Physics, Vol. 58, p. 090606 Year: 2019 Authors: Dapeng Wang, Mamoru Furuta Title: Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors Journal: Beilstein Journal of Nanotechnology, Vol. 10, pp. 1125-1130 Year: 2019 Authors: Mamoru Furuta, Daichi Koretomo, Yusaku Magari, S G Mehadi Aman, Ryunosuke Higashi, Shuhei Hamada Title: Heterojunction channel engineering to enhance performance and reliability of amorphous In–Ga–Zn–O thin-film transistors Journal: Japanese Journal of Applied Physics, Vol. 58, No. 9, pp. 090604-1-090604-9 Year: 2019 Authors: Sol-Mi Kwak, Hyeong-Rae Kim, Hye-Won Jang, Ji-Hee Yang, Mamoru Furuta, Sung-Min Yoon Title: Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator. Journal: Organic Electronics, Vol. 71, pp. 7-13 Year: 2019 Authors: C. J. Koswaththage, T. Higashizako, T. Okada, T. Sadoh, Mamoru Furuta, B. S. Bae, T. Noguchi Title: High mobility sputtered InSb film by blue laser diode annealing Journal: AIP advances, Vol. 9, No. 4, pp. 045009-1-045009-5 Year: 2019 Authors: Dapeng Wang, Wenjing Zhao, Mamoru Furuta Title: Collaborative optimization of thermal budget annealing and active layer defect content enhancing electrical characteristics and bias stress stability in InGaZnO thin-film Journal: Journal of Physics D: Applied Physics, Vol. 52, pp. 235101-1-235101-6 Year: 2019 Authors: sumio sugisaki, tokiyoshi Matsuda, Mutsunori Uenuma, Toshihide Nabatame, Yasuhiko Nakashima, Takahito Imai, Yusaku Magari, Daichi Koretomo, Mamoru Furuta, Mustumi Kimura Title: Memristive characteristic of an amorphous Ga-Sn-O thin-film device Journal: Scientific reports, Vol. 9, pp. 2757-1-2757-7 Year: 2019 Authors: Daichi Koretomo, Yuta Hashimoto, Shuhei Hamada, Miki Miyanaga, Mamoru Furuta Title: Influence of a SiO2 passivation on electrical properties and reliability of In–W–Zn–O thin-film transistor Journal: Japanese Journal of Applied Physics, Vol. 58, No. 1, pp. 018003-1-018003-3, Japan Society of Applied Physics Year: 2018 Authors: Dapeng Wang, Mamoru Furuta Title: Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses Journal: Beilstein Journal of Nanotechnology, Vol. 9, pp. 2573-2580 Year: 2018 Authors: S G Mehadi Aman, Daichi Koretomo, Yusaku Magari, Mamoru Furuta Title: Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In–Ga–Zn–O Thin-Film Transistors Journal: IEEE Transaction on Electron Devices, Vol. 65, No. 8, pp. 3257-3263, IEEE Year: 2018 Authors: Aman S G Mehadi, Yusaku Magari, Kenta Shimpo, Yuya Hirota, Hisao Makino, Daichi Koretomo, Mamoru Furuta Title: Low temperature (150 ℃) activation of Ar+O2+H2 sputtered In-Ga-Zn-O thin film transistors Journal: Applied Physics Express, Vol. 11, No. 8, pp. 0811101-1-0811101-4 Year: 2018 Authors: Aman S G Mehadi, Mamoru Furuta Title: Correlation between passivation film density and reliability pf In–Ga–Zn–O thin-film transistors Journal: Japanese Journal of Applied Physics, Vol. 57, pp. 088001-1-088001-2 Year: 2018 Authors: Dapeng Wang, Wenjing Zhao, Hua Li, Mamoru Furuta Title: Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses Journal: Materials, Vol. 11, No. 4, pp. 559-1-559-11 Year: 2018 Authors: Mamoru Furuta, Yusaku Magari, Shinsuke Hashimoto, Kenichiro Hamada Title: Low-temperature Processed InGaZnO MES-FET for Flexible Device Applicatio Journal: ECS transaction, Vol. 79, No. 1, pp. 43-48 Year: 2017 Authors: Tokiyoshi MATSUDA, Kenta UMEDA, Yuta KATO, Daiki NISHIMOTO, Mamoru Furuta, Mustumi KIMURA Title: Rare-metal-free high-performance Ga-Sn-O thin film transistor Journal: Scientific Reports, Vol. 7, p. 44326 Year: 2017 Authors: WANG Dapeng, JIANG Jingxin, FURUTA Mamoru Title: Investigation of Carrier Generation Mechanism in Fluorine-Doped n+-In–Ga–Zn-O for Self-Aligned Thin-Film Transistors Journal: IEEE Journal of Display Technology, Vol. 12, No. 3, pp. 258-262, IEEE Year: 2016 Authors: FURUTA Mamoru, JIANG Jingxin, MAI Phi Hung, Tatsuya Toda, WANG Dapeng, Gengo Tatsuoka Title: Suppression of Negative Gate Bias and Illumination Stress Degradation by Fluorine-Passivated In-Ga-Zn-O Thin-Film Transistors Journal: ECS Journal of Solid State Science and Technology, Vol. 5, No. 3, pp. Q88-Q91 Year: 2016 Authors: Kahori Kise, Mami Fujii, Satoshi Urakaswa, Haruka Yamazaki, Emi Kawashima, Shigekazu Tomai, Koki Yano, WANG Dapeng, FURUTA Mamoru, Yasuaki Ishikawa, Yukiharu Uraoka Title: Self-heating induced instability of oxide thin film transistors under dynamic stress Journal: Applied Physics Letters, Vol. 108, p. 023501 Year: 2016 Authors: MAI Phi Hung, WANG Dapeng, FURUTA Mamoru Title: Origin of the alternative current (AC-) gate bias improving the NBIS stability of IGZO TFTs Journal: ECS Solid State Letters, Vol. 4 , No. 12, pp. Q66-Q68, Electrochemical Society Year: 2015 Authors: Y. Koga, T. Matsuda, M. Kimura, WANG Dapeng, FURUTA Mamoru, M. Kasami, S. Tomai, K. Yano Title: Capacitance Sensor of Frequency Modulation for Integrated Touchpanels Using Amorphous In-Sn-Zn-O Thin-FIlmTransistors Journal: IEICE Trabsaction on Electronics, Vol. E98-C, No. 11, pp. 1028-1031 Year: 2015 Authors: MAI Phi Hung, WANG Dapeng, FURUTA Mamoru Title: Investigating Effect of Postannealing Time on Positive Bias Stress Stability of In–Ga–Zn–O TFT by Conductance Method Journal: IEEE Transaction on Electron Devices, Vol. 62, No. 11, pp. 3697-3702 Year: 2015 Authors: G. T. Dang, KAWAHARAMURA Toshiyuki, FURUTA Mamoru, M. W. Allen Title: Mist-CVD Grown Sn-Doped α-Ga2O3 MESFETs Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 62, No. 11, pp. 3640-3644 Year: 2015 Authors: G. T. Dang, KAWAHARAMURA Toshiyuki, FURUTA Mamoru, S. Saxena, M. W. Allen Title: Stability of In-Ga-Zn-O metal-semiconductor field-effect-transistors under bias, illumination, and temperature stress Journal: Applied Physics Letter, Vol. 107, pp. 143504-1-143504-5 Year: 2015 Authors: FURUTA Mamoru, JIANG Jingxin, Gengo Tatsuoka, WANG Dapeng Title: (Invited) Doping and Defect Passivation in In-Ga-Zn-O by Fluorine Journal: ECS Transaction, Vol. 67, No. (1), pp. 41-49 Year: 2015 Authors: JIANG Jingxin, Tatsuya Toda, MAI Phi Hung, WANGDapeng, FURUTA Mamoru Title: Highly stable fluorine-passivated In–Ga–Zn–O thin-film transistors under positive gate bias and temperature stress Journal: Applied Physics Express, Vol. 7, pp. 114103-01-114103-4 Year: 2014 Authors: Tatuya Toda, WANGDapeng, JIANG Jingxin, MAI Phi Hung, FURUTA Mamoru Title: Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor Journal: IEEE Transactions on Electron Devices, Vol. 61, No. 11, pp. 3762-3767 Year: 2014 Authors: FURUTA Mamoru, KAWAHARAMURA Toshiyuki, Takayuki Uchida, WANGDapeng, SANADA Masaru Title: High-Performance Solution-Processed InGaZnO Thin-Film Transistor Fabricated by Ozone-Assisted Atmospheric Pressure Mist Deposition Journal: Journal of Display Technology, Vol. 10, No. 11, pp. 934-938, IEEE Year: 2014 Authors: JIANG Jingxin, FURUTA Mamoru, WANGDapeng Title: Self-Aligned Bottom-Gate In-Ga-Zn-O Thin-Film Transistor With Source/Drain Regions Formed by Direct Deposition of Fluorinated Silicon Nitride Journal: IEEE Electron Device Letters, Vol. 35, No. 9, pp. 933-935 Year: 2014 Authors: MAI Phi Hung, WANGDapeng, Tatsuya Toda, JIANG Jingxin, FURUTA Mamoru Title: Quantitative Analysis of Hole-Trapping and Defect-Creation in InGaZnO Thin-Film Transistor under Negative-Bias and Illumination-Stress Journal: ECS Journal of Solid State Science and Technology, Vol. 3, No. 9, pp. Q3023-Q3026 Year: 2014 Authors: WANGDapeng, MAI Phi Hung, JIANG Jingxin, Tatuya Toda, FURUTA Mamoru Title: Suppression of Degradation Induced by Negative Gate Bias and Illumination Stress in Amorphous InGaZnO Thin-Film Transistors by Applying Negative Drain Bias Journal: ACS Applied Materials & Interfaces, Vol. 6, No. 8, pp. 5713-5718 Year: 2014 Authors: MAI Phi Hung, WANGDapeng, JIANG Jingxin, FURUTA Mamoru Title: Negative Bias and Illumination Stress Induced Electron Trapping at Back-Channel Interface of InGaZnO Thin-Film Transistor Journal: ECS Solid State Letters, Vol. 3, No. 3, pp. Q13-Q16 Year: 2014 Authors: WANGDapeng, MAI Phi Hung, JIANG Jingxin, Tatsuya Toda, LI Chaoyang, FURUTA Mamoru Title: Effect of drain bias on negative gate bias and illumination stress induced degradation in amorphous InGaZnO thin-film transistors Journal: Japanese Journal of Applied Physics, Vol. 53, pp. 03CC01-1-03CC01-4 Year: 2014 Authors: KAWAHARAMURA Toshiyuki, Takayuki Uchida, SANADA Masaru, FURUTA Mamoru Title: Growth and electrical properties of AlOx grown by mist chemical vapor deposition Journal: AIP Advances, Vol. 3, pp. 032135-1-032135-9 Year: 2013 Authors: Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, WANGDapeng, FURUTA Mamoru, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka Title: Thermal Analysis of amorphous oxide thin-film transistor degradated by combination of joule heating and hot carrier effect Journal: Applied Physics Letters, Vol. 102, pp. 053506-1-053506-4 Year: 2013 Authors: Tatsuya Toda, KAWAHARAMURA Toshiyuki, FRUSAWA Hiroshi, FURUTA Mamoru Title: Thin-Film Transistor Using Dielectrophoretic Assembly of Single-Walled Carbon Nanotubes Journal: ECS Transactions, Vol. 50, No. 8, pp. 223-228 Year: 2012 Authors: FURUTA Mamoru, KAWAHARAMURA Toshiyuki, Tatsuya Toda, WANGDapeng Title: A-InGaZnO Thin-Film Transistor with Non-Vacuum Processed InGaZnO/AlOx Gate Dielectric Stack Journal: ECS Transactions, Vol. 50, No. 8, pp. 95-100 Year: 2012 Authors: Shin-ichi Shimakawa, WANGDapeng, FURUTA Mamoru Title: Photo Induced Negative Bias Instability of Zinc Oxide Thin-Film Transistors Journal: Japanese Journal of Applied Physics, Vol. 51, No. 10, pp. 108003-1-108003-2 Year: 2012 Authors: FURUTA Mamoru, KAWAHARAMURA Toshiyuki, WANGDapeng, Tatsuya Toda, HIRAO Takashi Title: Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition Journal: IEEE Electron Device Letters, Vol. 33, No. 6, pp. 851-853, IEEE Year: 2012 Authors: KAWAHARAMURA Toshiyuki, Tai Jan Dan, FURUTA Mamoru Title: Successful Growth of Conductive Highly Crystalline Sn-Doped a-Ga2O3 Thin Films by Fine-Channel Mist Chemical Vapor Deposition Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 040207-1-040207-3, Japan Society of Applied Physics　 Year: 2012 Authors: T. Nishida, K. Fuse, FURUTA Mamoru, Y. Ishikawa, Y. Uraoka Title: Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 03CA01-1-03CA01-5, Japan Society of Applied Physics Year: 2012 Authors: S. Shimakawa, Y. Kamada, KAWAHARAMURA Toshiyuki, WANGDapeng, LI Chaoyang, S. Fujita, HIRAO Takashi, FURUTA Mamoru Title: Photo-Leakage Current of Thin-Film Transistors with ZnO Channels Formed at Various Oxygen Partial Pressures under Visible Light Irradiation Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 03CB04-1-03CB04-4, Japan Society of Applied Physics　 Year: 2012 Authors: MOMOTA Sadao, Jango Hangu, Takuya Toyonaga, Hikaru Terauchi, Kazuki Maeda, Jun Taniguchi, HIRAO Takashi, FURUTA Mamoru, KAWAHARAMURA Toshiyuki Title: Control of swelling height of Si crystal by irradiating Ar beam Journal: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 1, pp. 552-556, American Scientific Publishers Year: 2012 Authors: T. Sakai, H. Seo, S. Aihara, M. Kubota, N. Egami, WANGDapeng, FURUTA Mamoru Title: A 128×96 Pixel, 50 m Pixel Pitch Transparent Readout Circuit using InGaZnO4 Thin Film Transistor Array with Indium-Tin-Oxide Eletrodes for Organic Image Sensor Journal: Japanese Journal of Applied Physics, Vol. 51, pp. 010202-1-010202-3 Year: 2011 Authors: M. Kimura, FURUTA Mamoru, Y. Kamada, T. Hiramatsu, T. Matsuda, FURUTA Hiroshi, LI Chaoyang, S. Fujita, HIRAO Takashi Title: Extraction of Trap Densities in ZnO Thin-Film Transistors and Dependence on Oxygen Partial Pressure During Sputtering of ZnO Films Journal: IEEE Transactions on Electron Devices, Vol. 58, No. 9, pp. 3018-3024, IEEE Electron Devices Society Year: 2011 Authors: Y. Kamada, S. Fujita, M. Kimura, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi Title: Reduction of Photo-Leakage Current in ZnO Thin-Film Transistors with Dual-Gate Structure Journal: IEEE Electron Device Letters, Vol. 32, p. 509 Year: 2011 Authors: Y. Kamada, S. Fujita, M. Kimura, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi Title: Effect of Chemical Stoichiometry of Channel Region on Bias Instability in ZnO Thin-film Transistors Journal: Applied Physics Letters, Vol. 98, p. 103512 Year: 2011 Authors: FURUTA Mamoru, Y. Kamada, T. Hiramatsu, LI Chaoyang, M. Kimura, S. Fujita, HIRAO Takashi Title: Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) with a SiOx/SiNx Stacked Gate Insulator Journal: Japanese Journal of Applied Physics, Vol. 50, p. 03CB09 Year: 2011 Authors: H. Seo, S. Aihara, T. Watabe, H. Ohtake, T. Sakai, M. Kubota, N. Egami, T. Hiramatsu, FURUTA Mamoru, HIRAO Takashi Title: A 128×96 Pixel Stacked-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin-Film Transistor Readout Circuit Journal: Japanese Journal of Applied Physics, Vol. 50, p. 024103 Year: 2011 Authors: M. Kimura, FURUTA Mamoru, Y. Kamada, T. Hiramatsu, T. Matsuda, FURUTA Hiroshi, LI Chaoyang, S. Fujita, HIRAO Takashi Title: Trap Densities in ZnO Thin-Film Transistors with SiOx Gate Insulators by Several Deposition Conditions Journal: Electrochemical and Solid-State Letters, Vol. 14, pp. H365-H367 Year: 2011 Authors: T. Hiramatsu, FURUTA Mamoru, T. Matsuda, LI Chaoyang, HIRAO Takashi Title: Behavior of Oxygen in Zinc Oxide Films Through Thermal Annealing and Its Effect on Sheet Resistance Journal: Applied Surface Science, Vol. 257, p. 5480 Year: 2011 Authors: M. Furuta, Y. Kamada, M. Kimura, T. Hiramatsu, T. Matsuda, C. Li, H. Furuta, S. Fujita, T. Hirao Title: Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channel Deposited by Sputtering under Various Oxygen Partial Pressures Journal: IEEE Electron Device Letters, Vol. 31, pp. 1257-1259, IEEE Year: 2010 Authors: H. Furuta, T. Kawaharamura, M. Furuta, K. Kawabata, T. Hirao, T. Komukai, K. Yoshihara, Y. Shimomoto, T. Oguchi Title: Crystal Structure Analysis of Multiwalled Carbon Nanotube Forests by Newly Developed Cross-Sectional XRD Measurement Journal: Applied Physics Express, Vol. 3, pp. 105101-1-105101-3, The Japan Society of Applied Physics Year: 2010 Authors: T. Matsuda, M. Furuta, T. Hiramatsu, H. Furuta, C. Li, T. Hirao Title: Thermal stability of ZnO thin film prepared by RF-magnetron sputtering evaluated by thermal desorption spectroscopy Journal: Applied Surface Science, Vol. 256, No. 21, pp. 6350-6353, Elsevier Year: 2010 Authors: H. Furuta, K. Ishii, K. Okada, M. Furuta, T. Hirao Title: Simulation Study of the In-plane Type Triode Carbon Nanotube Emitter Journal: Journal of Vacuum Science & Technology B, Vol. 28, No. 4, pp. 878-881, The AVS Science & Technology Society Year: 2010 Authors: H. Furuta, T. Kawaharamura, K. Kawabata, M. Furuta, T. Matsuda, C. Li, T. Hirao Title: High-Density Short-Height Directly Grown CNT Patterned Emitter on Glass Journal: e-Journal of Surface Science and Nanotechnology, Vol. 8, pp. 336-339, The Surface Science Society of Japan Year: 2010 Authors: T. Hiramatsu, T. Matsuda, H. Furuta, H. Nitta, T. Kawaharamura, C. Li, M. Furuta, T. Hirao Title: Effect of Pulsed Substrate Bias on Film Properties of SiO2 Deposited by Inductively Coupled Plasma Deposition Journal: Japanese Journal Applied Physics, Vol. 49, pp. 03CA03-1-03CA03-4 Year: 2010 Authors: M. Furuta, K. Shimamura, H. Tsubokawa, K. Tokushige, H. Furuta, T. Hirao Title: Activation Behavior of Boron Implanted Poly-Si on Glass Substrate Journal: Thin Solid Films, Vol. 518, pp. 4477-4481, Elsevier Year: 2010 Authors: Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi Title: Analysis of Subthreshold Photo-Leakage Current in ZnO Thin-Film Transistors using Indium-Ion Implantation Journal: Solid State Electronics, Vol. 54, p. 1392 Year: 2010 Authors: FURUTA Mamoru, LI Chaoyang, HIRAO Takashi Title: Uniformity and Stability in Zinc Oxide Thin-Film Transistors (ZnO TFTs) Journal: Journal of Society for Information Display, Vol. 18/10, p. 773 Year: 2010 Authors: Chaoyang Li, Tokiyoshi Matsuda, Toshiyuki Kawaharamura, Hiroshi Furuta, Mamoru Furuta, Takahiro Hiramatsu, Takashi Hirao, Yoichiro Nakanishi, Keiji Ichi Title: Comparison of structural and photoluminescence properties of ZnO nano-structures influenced by gas ratio and substrate bias during radio frequency sputtering Journal: J. Vac. Sci. Technol. B, Vol. 28, No. 2, pp. C2B51-55 Year: 2010 Authors: M. Kimura, Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi Title: Mechanism Analysis of Photoleakage Current in ZnO Thin-Film Transistors using Device Simulation Journal: Applied Physics Letters, Vol. 97, p. 163503 Year: 2010 Authors: Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, H. Nitta, FURUTA Mamoru, HIRAO Takashi Title: Photo Leakage Current of ZnO TFTs in the Visible Light Journal: Japanese Journal of Applied Physics, Vol. 49, p. 03CB03 Year: 2010 Authors: FURUTA Mamoru, T. Nakanishi, M. Kimura, T. Hiramatsu, T. Matsuda, KAWAHARAMURA Toshiyuki, FURUTA Hiroshi, HIRAO Takashi Title: Effect of Surface Treatment of Gate-insulator on Uniformity in Bottom-gate ZnO Thin-film Transistors Journal: Electrochemical and Solid-State Letters, Vol. 13, pp. H101-H104 Year: 2010 Authors: FURUTA Mamoru, T. Hiramatsu, HIRAO Takashi Title: Enhanced Nucleation of Microcrystalline Silicon Thin-films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) with Low-Frequency Pulse Substrate Bias Journal: Japanese Journal of Applied Physics, Vol. 49, p. 050202 Year: 2010 Authors: T. Matsuda, FURUTA Mamoru, T. Hiramatsu, FURUTA Hiroshi, HIRAO Takashi Title: Crystallinity and Resistivity of ZnO Thin Films with Indium Implantation and Post Annealing Journal: Journal of Vacuum Science and Technology A, Vol. 28, p. 135 Year: 2010 Authors: T. Hiramatsu, FURUTA Mamoru, FURUTA Hiroshi, T. Matsuda, LI Chaoyang, HIRAO Takashi Title: Effect of Substrate Bias on Crystal Structure and Thermal Stability of Sputter-Deposited ZnO Films Journal: Journal of Crystal Growth, Vol. 311, pp. 282-285 Year: 2009 Authors: S. Aihara, H. Seo, M. Namba, H. Ohtake, M. Kubota, N. Egami, T. Hiramatsu, T. Matsuda, FURUTA Mamoru, HIRAO Takashi Title: Stacked Image Sensor with Green- and Red-Sensitive Organic Photoconductive Films Applying Zinc-Oxide Thin Film Transistors to a Signal Readout Circuit Journal: IEEE Trans. on Electron Devices, Vol. 56, No. 11, pp. 2570-2576 Year: 2009 Authors: Chaoyang Li, Toshiyuki Kawaharamura, Tokiyoshi Matsuda, Hiroshi Furuta, Takahiro Hiramatsu, FURUTA Mamoru, Takashi Hirao Title: Intense green cathodoluminescence from low-temperature-deposited ZnO film with fluted hexagonal cone nanostructures Journal: Appl. Phys. Express, Vol. 2, pp. 091601-091603 Year: 2009 Authors: FURUTA Mamoru, T. Hiramatsu, T. Matsuda, LI Chaoyang, FURUTA Hiroshi, HIRAO Takashi Title: Thermal Stability and Sheet Resistance of Undoped ZnO Films Deposited on Insulators Journal: Electrochemical and Solid-State Letters, Vol. 12, pp. K74-K76 Year: 2009 Authors: Chaoyang Li, Mamoru Furuta, Tokiyoshi Matsuda, Takahiro Hiramatsu, Hiroshi Furuta, Takashi Hirao Title: Effects of substrate on the structural, electrical and optical properties of Al-doped ZnO films prepared by RF magnetron sputtering Journal: Thin Solid Films, Vol. 517, pp. 3265-3268 Year: 2009 Authors: FURUTA Mamoru, T. Hiramatsu, T. Matsuda, LI Chaoyang, FURUTA Hiroshi, HIRAO Takashi Title: Oxygen Bombardment Effects on Average Crystallite Size of Sputter-Deposited ZnO Films Journal: Journal of Non-Crystalline Solids, Vol. 354, pp. 1926-1931 Year: 2008 Authors: FURUTA Mamoru, HIRAO Takashi, T. Hiramatsu, T. Matsuda, LI Chaoyang, FURUTA Hiroshi, H. Hokari, M. Yoshida, H. Ishii, M. Kakegawa Title: Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs Journal: IEEE Trans. on Electron Devices, Vol. 55, No. 11, pp. 3136-3142 Year: 2008 Authors: T. Matsuda, FURUTA Mamoru, T. Hiramatsu, LI Chaoyang, FURUTA Hiroshi, HIRAO Takashi Title: Influence of Amorphous Buffer Layers on the Crystallinity of Sputter-Deposited Undoped ZnO Films Journal: Journal of Crystal Growth, Vol. 315, pp. 31-35 Year: 2008 Authors: T. Hiramatsu, FURUTA Mamoru, FURUTA Hiroshi, T. Matsuda, HIRAO Takashi Title: Influence of Thermal Annealing on Microstructure of Zinc Oxide Films Deposited by RF Magnetron Sputtering Journal: Japanese Journal of Applied Physics, Vol. 46, pp. 3319-3323 Year: 2007 Authors: T. Matsuda, FURUTA Mamoru, T. Hiramatsu, FURUTA Hiroshi, HIRAO Takashi Title: Sheet Resistance and Crystallinity of Ga- and Al- Implanted Zinc Oxide Thin Films with Post Annealing Journal: Journal of Vacuum Science and Technology A, Vol. 25, pp. 706-710 Year: 2007 Authors: T. Hirao, M. Furuta, H. Furuta, T.Matsuda, T. Hiramatsu, H. Hokari, M. Yoshida, M.Ishii, M.Kakegawa Title: Novel top-gate zinc oxide thin-film transistors (ZnO TFTs) for AMLCDs Journal: J.of the SID, Vol. 15, pp. 17-22 Year: 2007 Authors: Chaoyang Li, Mamoru Furuta, Tokiyoshi Matsuda, Takahiro Hiramatsu, Hiroshi Furuta, Takashi Hirao Title: RF power and thermal annealing effect on the properties of zinc oxide films prepared by radio frequency magnetron sputtering Journal: Research Letter in Materials Science, Vol. 1155, pp. 26459-26463 Year: 2007 Authors: H. Furuta, M. Furuta, T.Matsuda, T.Hiramatsu, T. Hirao Title: SiO2 Insulator Film Synthesized at 100℃ using Tetramethylsilane by Inductively Coupled Plasma-Chemical Vapor Deposition Journal: Japanese Journal of Applied Physics, Vol. 46, No. 10, pp. L237-L240, The Japan Society of Applied Physics Year: 2007 Authors: FURUTA Mamoru, T. Hiramatsu, T. Matsuda, FURUTA Hiroshi, HIRAO Takashi Title: Effects of Energetic Particle Bombardment on the Microstructure of Zinc Oxide (ZnO) Films Deposited by rf Magnetron Sputtering Journal: Japanese Journal of Applied Physics, Vol. 46, pp. 4038-4041 Year: 2007 Authors: T. Komukai, K. Aoki, H. Furuta, M. Furuta, K. Oura, HIRAO Takashi Title: Structural Analysis of High-Density Vertically Aligned Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition with Fe/Al Multilayer Catalyst Journal: Japanese Journal of Applied Physics, Vol. 45, No. 11, pp. 8988-8990, The Japan Society of Applied Physics Year: 2006 Authors: K. Aoki, T. Yamamoto, H. Furuta, T. Ikuno, S. Honda, M. Furuta, K. Oura, T. Hirao Title: Low-Temperature Growth of Carbon Nano-Fiber by Thermal Chemical Vapor Deposition using CuNi Catalyst Journal: Japanese Journal of Applied Physics, Vol. 45, No. 5329, pp. 5329-5331, The Japan Society of Applied Physics Year: 2006 Authors: T. Komukai, K. Aoki, FURUTA Hiroshi, FURUTA Mamoru, K. Oura, HIRAO Takashi Title: Density Control of Carbon Nanotubes Through The Thickness of Fe/Al Multilayer Catalyst Journal: Japanese Journal of Applied Physics, Vol. 45, pp. 6043-6045 Year: 2006 Authors: FURUTA Mamoru, Y. Uraoka, T. Fuyuki Title: Reliability of Low-temperature Poly-Si TFTs with LDD Structures Journal: Japanese Journal of Applied Physics, Vol. 42, pp. 4257-4260 Year: 2003 Authors: FURUTA Mamoru, H. Satani, T. Terashita, T. Tamura, Y. Tsuchihashi Title: Hydrogen Implantation Damage in Polycrystalline Silicon Thin Film Transistors Caused by Ion Doping Journal: Japanese Journal of Applied Physics, Vol. 41, pp. 1259-1264 Year: 2002 Authors: FURUTA Mamoru, T. Kawamura, T. Yoshioka, Y. Miyata Title: Bottom-Gate Poly-Si Thin Film Transistors using XeCl Excimer Laser Annealing and Ion Doping Journal: IEEE Transaction on Electron Devices, Vol. 40, pp. 1964-1969 Year: 1993 Authors: Y. Miyata, FURUTA Mamoru, T. Yoshioka, T. Kawamura Title: Polycrystalline Silicon Recrystallized with Excimer Laser Irradiation and Impurity Doping using Ion Doping Method Journal: Journal of Applied Physics, Vol. 73, pp. 3271-3275 Year: 1993 Authors: Y. Miyata, FURUTA Mamoru, T. Yoshioka, T. Kawamura Title: Low-Temperature Polycrystalline Silicon Thin-Film Transistors for Large-Area Liquid Crystal Display Journal: Japanese Journal of Applied Physics, Vol. 31, pp. 4559-4562 Year: 1992 Authors: K. Okamoto, FURUTA Mamoru, K. Yamaguchi Title: Lateral Growth on (110) GaAs Substrates by Metalorganic Chemical Vapor Deposition Journal: Japanese Journal of Applied Physics, Vol. 27, pp. L437-L440 Year: 1988 Authors: K. Okamoto, FURUTA Mamoru, K. Yamaguchi Title: Zn and Si Doping in {110} GaAs Epilayers Grown by Metalorganic Chemical Vapor Deposition Journal: Japanese Journal of Applied Physics, Vol. 27, pp. L2121-L2124 Year: 1988
Keynote lectures	High Mobility Metal Oxide Semiconductor Thin-Film Transistors for Display and LSI Applications, 2023 Metal oxide semiconductor thin-film transistor technologies for display applications, International conference on Consumer Electronics and Devices (ICCED2022), NANJING, China (Online), 2022
Invited lectures	High-mobility Polycrystalline Indium Oxide (InOx:H) Thin-film Transistor, 18th International Thin-Film Transistor Conference, Kaist, Korea, 2024 Solid-phase crystallization of hydrogen-doped indium oxide for low-temperature processed TFTs, 2023 Nondegenerate Hydrogen-Doped Polycrystalline InOx:H Thin Film for High-mobility Thin-Film Transistors, 242th ECS Meeting, Atlanta, USA, 2022 Hydrogen-doped polycrystalline indium oxide (InOx:H) formed by solid phase crystallization for high-mobility TFTs, 17th International Thin-Film Transistor Conference (ITC2022), University of Surrey, U.K., 2022 High mobility hydrogen-doped polycrystalline indium oxide (InOx:H) TFTs , The 22nd International Meeting on Information Display (IMID2022), BUSAN, KOREA, 2022 Solid Phase Crystallization of Hydrogenated Indium Oxide (InOX:H) for High Mobility Thin-Film Transistors , International Workshop on Active-matrix Flatpanel Displays and Devices (AM-FPD22), Kyoto, Japan, 2022 Low-voltage operation of hydrogenated IGZO (IGZO:H) TFTs with an anodize Al2O3 gate dielectric for flexible devices, International TFT conference (ITC2020/2021), China, 2021 Heterojunction Channel Engineering for Oxide Thin-Film Transistors, Hybrid, 2020 Heterojunction Channel Engineering for in-Ga-Zn-O Thin-Film Transistors, Online, 2020 TFTs for Active Matrix: from Silicon to Oxides and New materials, 3rd International Conference on Consumer Electronics and Device (ICCED 2019), Nanjing, Chian, 2019 Carrier transport and bias stress stability of IGZO TFT with heterojunction channel , 7th International Conference on Semiconductor Technology for ULSI and TFTs, Kyoto, Japan, 2019 Low-temperature Processed InGaZnOx TFT with an Organic Gate Insulator, 5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2018), Jeju, Korea, 2018 Low-temperature activation of Ar+O2+H2 sputtered InGaZnOx film followed by thermal annealing, 4th E-MRS & MRS-J Bilateral Symposium 2018 (7th International Symposium on Transparent on Conductive Materials (TCM2018)), Crete, Greece, 2018 Low-temperature activation method for InGaZnOx thin-film transistors, ECS and SMEQ Joint International Meeting, Cancun, Mexico, 2018
Awards	Special Recognition Award, Society for Information Display, 2021 APEX/JJAP Editorial Contribution Award, Japan Society of Applied Physics, 2017
Grants-in-Aid for Scientific Research from the Japanese government	Project title: Zinc oxide transparent transistor and its application to stacked image sensor Category: Grant-in-Aid for Scientific Research (C) Project number: 23560408 Project period: 2011-2013 Total budget amount: 5,330,000 yen Keywords: Project title: Flexible and transparent circuits for stacked image sensor application Category: Grant-in-Aid for Scientific Research (C) Project number: 16K06309 Project period: 2016-2018 Total budget amount: 4,810,000 yen Keywords:

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Committee roles	Program Sub-Committee of IMID 2019, 2019-2020 Materials, Guest Editor Special Issue "Silicon and Metal Oxide Thin Film Transistors: Materials, Process Technology, Device Physics, and Reliability", 2019-2021 Editor of APEX/JJAP, Japan Society of Applied Physics, 2018-2019

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